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D606-VB Product details
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D606-VB MOSFET Product Introduction
D606-VB is a high-efficiency bipolar N+P channel MOSFET in TO252-4L package for ±40V voltage applications. The device is configured as a common source-common drain structure with symmetrical N-channel and P-channel MOSFETs for positive and negative voltage processing, respectively. Its gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.8V and -1.7V, respectively, ensuring efficient switching under appropriate gate drive. The on-resistance (RDS(ON)) of D606-VB is 14mΩ at 4.5V gate drive (both N-channel and P-channel) and 16mΩ at 10V gate drive (both N-channel and P-channel). The MOSFET supports a continuous drain current (ID) of ±50A, and uses trench technology to provide excellent switching performance and low conduction loss, which is widely used in application scenarios requiring bipolar switching functions.
D606-VB is a high-efficiency bipolar N+P channel MOSFET in TO252-4L package for ±40V voltage applications. The device is configured as a common source-common drain structure with symmetrical N-channel and P-channel MOSFETs for positive and negative voltage processing, respectively. Its gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.8V and -1.7V, respectively, ensuring efficient switching under appropriate gate drive. The on-resistance (RDS(ON)) of D606-VB is 14mΩ at 4.5V gate drive (both N-channel and P-channel) and 16mΩ at 10V gate drive (both N-channel and P-channel). The MOSFET supports a continuous drain current (ID) of ±50A, and uses trench technology to provide excellent switching performance and low conduction loss, which is widely used in application scenarios requiring bipolar switching functions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 16/16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
D606-VB MOSFET Detailed parameter description
- **Package type**: TO252-4L
- **Configuration**: Common source-common drain N+P channel
- **Drain-source voltage (VDS)**: ±40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V (N channel), -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V (applicable to both N channel and P channel)
- 16mΩ @ VGS=10V (applicable to both N channel and P channel)
- **Drain current (ID)**: ±50A
- **Technology**: Trench technology
- **Package type**: TO252-4L
- **Configuration**: Common source-common drain N+P channel
- **Drain-source voltage (VDS)**: ±40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V (N channel), -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V (applicable to both N channel and P channel)
- 16mΩ @ VGS=10V (applicable to both N channel and P channel)
- **Drain current (ID)**: ±50A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules of D606-VB MOSFET
1. **Bipolar switching circuit**: D606-VB is suitable for bipolar switching circuits due to its symmetrical N+P channel structure. This makes it an ideal choice for various power management and switching circuits, capable of handling positive and negative voltages and providing efficient current switching capabilities.
2. **Power converter**: In DC-DC converters and other power converters, D606-VB can be used to handle bipolar voltages at input and output. Its low on-resistance and high current capability ensure efficient power conversion and stable operation, suitable for efficient power management modules.
3. **Motor drive control**: This MOSFET is also suitable for motor drive control applications such as DC motor drive and stepper motor control. It can handle currents up to ±50A and provide stable switching control, which helps to achieve efficient motor drive.
4. **Load Switch**: D606-VB performs well in load switch applications and can handle positive and negative voltages in the switching operation of the load. It is suitable for various load control circuits that require high current handling and bipolar switching functions, such as load switch control in consumer electronics and industrial equipment.
In summary, D606-VB MOSFET is widely used in bipolar switching circuits, power converters, motor drive control and load switches due to its bipolar switching capability, high current handling capability and low on-resistance. Its high efficiency and stability enable it to provide excellent performance in various application scenarios.
1. **Bipolar switching circuit**: D606-VB is suitable for bipolar switching circuits due to its symmetrical N+P channel structure. This makes it an ideal choice for various power management and switching circuits, capable of handling positive and negative voltages and providing efficient current switching capabilities.
2. **Power converter**: In DC-DC converters and other power converters, D606-VB can be used to handle bipolar voltages at input and output. Its low on-resistance and high current capability ensure efficient power conversion and stable operation, suitable for efficient power management modules.
3. **Motor drive control**: This MOSFET is also suitable for motor drive control applications such as DC motor drive and stepper motor control. It can handle currents up to ±50A and provide stable switching control, which helps to achieve efficient motor drive.
4. **Load Switch**: D606-VB performs well in load switch applications and can handle positive and negative voltages in the switching operation of the load. It is suitable for various load control circuits that require high current handling and bipolar switching functions, such as load switch control in consumer electronics and industrial equipment.
In summary, D606-VB MOSFET is widely used in bipolar switching circuits, power converters, motor drive control and load switches due to its bipolar switching capability, high current handling capability and low on-resistance. Its high efficiency and stability enable it to provide excellent performance in various application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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