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D5T40P-VB Product details
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D5T40P-VB MOSFET Product Introduction
The D5T40P-VB is a high-voltage N-Channel MOSFET in a TO252 package, specifically designed for switching and control applications in high-voltage environments. Its maximum drain-source voltage (VDS) is 650V, enabling it to handle high-voltage loads. The gate-source voltage (VGS) range is ±30V, providing a wide range of control flexibility. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring stable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of the D5T40P-VB is 1000mΩ at VGS=10V, suitable for switching operations in high-voltage applications. Its maximum continuous drain current (ID) is 5A, which can meet medium current requirements. The device uses SJ_Multi-EPI technology to provide excellent high-voltage performance and reliability.
The D5T40P-VB is a high-voltage N-Channel MOSFET in a TO252 package, specifically designed for switching and control applications in high-voltage environments. Its maximum drain-source voltage (VDS) is 650V, enabling it to handle high-voltage loads. The gate-source voltage (VGS) range is ±30V, providing a wide range of control flexibility. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring stable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of the D5T40P-VB is 1000mΩ at VGS=10V, suitable for switching operations in high-voltage applications. Its maximum continuous drain current (ID) is 5A, which can meet medium current requirements. The device uses SJ_Multi-EPI technology to provide excellent high-voltage performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Surface mount package with optimized heat dissipation, suitable for high voltage applications.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for high voltage switching and control.
3. **Drain-Source Voltage (VDS):** 650V
- **Description:** Maximum voltage allowed between drain and source, suitable for high voltage power supply and conversion applications.
4. **Gate-Source Voltage (VGS):** ±30V
- **Description:** Maximum voltage range allowed between gate and source, providing a wide range of control capabilities.
5. **Threshold Voltage (Vth):** 3.5V
- **Description:** Gate voltage at which MOSFET starts to turn on, suitable for high voltage control applications.
6. **On-resistance (RDS(ON)):**
- **1000mΩ @ VGS=10V:** The on-resistance at VGS=10V, suitable for high-voltage switch applications.
7. **Continuous drain current (ID):** 5A
- **Description:** The maximum current that the device can continuously conduct under specific conditions.
8. **Technology:** SJ_Multi-EPI
- **Description:** Super Junction multi-epitaxial structure technology improves the efficiency and electrical performance of high-voltage MOSFETs.
1. **Package:** TO252
- **Description:** Surface mount package with optimized heat dissipation, suitable for high voltage applications.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for high voltage switching and control.
3. **Drain-Source Voltage (VDS):** 650V
- **Description:** Maximum voltage allowed between drain and source, suitable for high voltage power supply and conversion applications.
4. **Gate-Source Voltage (VGS):** ±30V
- **Description:** Maximum voltage range allowed between gate and source, providing a wide range of control capabilities.
5. **Threshold Voltage (Vth):** 3.5V
- **Description:** Gate voltage at which MOSFET starts to turn on, suitable for high voltage control applications.
6. **On-resistance (RDS(ON)):**
- **1000mΩ @ VGS=10V:** The on-resistance at VGS=10V, suitable for high-voltage switch applications.
7. **Continuous drain current (ID):** 5A
- **Description:** The maximum current that the device can continuously conduct under specific conditions.
8. **Technology:** SJ_Multi-EPI
- **Description:** Super Junction multi-epitaxial structure technology improves the efficiency and electrical performance of high-voltage MOSFETs.
Domain and module applications：
Application Examples
The D5T40P-VB MOSFET is mainly suitable for high voltage, medium current switching and control applications. Here are some specific application examples:
1. **High voltage power conversion:**
- **Example:** In a high voltage DC-DC converter, the D5T40P-VB can be used as the main switching element to process high voltage input signals and convert them into a stable output voltage. Its 650V drain-source voltage enables it to handle high voltage inputs, while its on-resistance also ensures efficient energy conversion.
2. **Power supply system:**
- **Example:** In a power supply system, the D5T40P-VB can be used for high voltage current switching control, such as controlling the rectification and regulation of high voltage current in a power adapter to ensure system stability and reliability.
3. **Industrial Control:**
- **Example:** In high-voltage control systems for industrial equipment, the D5T40P-VB can be used to control high-voltage loads, such as high-voltage motor drives and relay controls. Its high voltage tolerance ensures reliability in high-load environments.
4. **Home Appliances and Consumer Electronics:**
- **Example:** In power management for home appliances such as TVs and refrigerators, the D5T40P-VB can be used for switching control of high-voltage power modules, providing stable voltage output and ensuring safe and efficient operation of the equipment under high voltage conditions.
The high voltage capability and good switching performance of the D5T40P-VB MOSFET make it excel in high-voltage applications, and it is particularly suitable for scenarios such as high-voltage power management and switching control.
The D5T40P-VB MOSFET is mainly suitable for high voltage, medium current switching and control applications. Here are some specific application examples:
1. **High voltage power conversion:**
- **Example:** In a high voltage DC-DC converter, the D5T40P-VB can be used as the main switching element to process high voltage input signals and convert them into a stable output voltage. Its 650V drain-source voltage enables it to handle high voltage inputs, while its on-resistance also ensures efficient energy conversion.
2. **Power supply system:**
- **Example:** In a power supply system, the D5T40P-VB can be used for high voltage current switching control, such as controlling the rectification and regulation of high voltage current in a power adapter to ensure system stability and reliability.
3. **Industrial Control:**
- **Example:** In high-voltage control systems for industrial equipment, the D5T40P-VB can be used to control high-voltage loads, such as high-voltage motor drives and relay controls. Its high voltage tolerance ensures reliability in high-load environments.
4. **Home Appliances and Consumer Electronics:**
- **Example:** In power management for home appliances such as TVs and refrigerators, the D5T40P-VB can be used for switching control of high-voltage power modules, providing stable voltage output and ensuring safe and efficient operation of the equipment under high voltage conditions.
The high voltage capability and good switching performance of the D5T40P-VB MOSFET make it excel in high-voltage applications, and it is particularly suitable for scenarios such as high-voltage power management and switching control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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