D5NK50Z-VB TO251 Product details
Product introduction:
D5NK50Z-VB is a high-voltage N-channel MOSFET with TO251 package and SJ_Multi-EPI technology. This MOSFET can withstand a drain-source voltage (VDS) of up to 650V and is suitable for high-voltage applications. Its gate drive voltage range is ±30V and has a threshold voltage (Vth) of 3.5V. D5NK50Z-VB has an on-resistance (RDS(ON)) of 950mΩ @VGS=10V and supports a drain current (ID) of up to 5A. This design makes D5NK50Z-VB very suitable for electronic circuits that require high voltage resistance, high current and high efficiency, such as power switching and inverter applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
Domain and module applications:
The high voltage and high current characteristics of D5NK50Z-VB MOSFET make it suitable for multiple fields and modules. The following are some typical application examples:
1. **Power switch**: D5NK50Z-VB performs well in high voltage power switch applications. Its high withstand voltage characteristics allow operation under high voltage conditions, while its relatively low on-resistance helps to improve switching efficiency. This makes it suitable for switching power supplies (SMPS) and AC-DC converters to ensure high efficiency and stability of power systems.
2. **Inverter**: In inverters (such as solar inverters and UPS), D5NK50Z-VB is able to handle high voltage and high current, ensuring efficient conversion and reliability of current. Its high withstand voltage capability makes it suitable for applications that need to convert DC to AC, meeting the requirements of inverter systems with high power requirements.
3. **Motor Drive**: The D5NK50Z-VB can be used for high-voltage switching applications in motor drive systems. Its high voltage and current handling capabilities are suitable for controlling the start-up and operation of high-voltage motors, ensuring stable operation of motors under high power conditions.
4. **Industrial Power**: In industrial power modules, the D5NK50Z-VB can be used for high-voltage power management and current switching. It can effectively handle high voltage and current loads and is suitable for use in industrial automation equipment and heavy-load power systems.
5. **High-voltage Battery Management**: In high-voltage battery management systems, the D5NK50Z-VB MOSFET can provide reliable switching control to protect batteries from overvoltage and overcurrent. These applications include battery protection for electric vehicles and high-voltage energy storage systems.
Through these application examples, the D5NK50Z-VB MOSFET demonstrates its wide applicability in high-voltage, high-current environments, making it an indispensable key component in various high-power electronic systems.
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