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D5N50-VB Product details
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D5N50-VB MOSFET Product Introduction
The D5N50-VB is a high-voltage N-Channel MOSFET in a TO252 package, designed for switching and control applications in high-voltage environments. Its maximum drain-source voltage (VDS) is up to 650V, enabling it to handle high-voltage loads. The gate-source voltage (VGS) range is ±30V, providing a wide range of control flexibility. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring stable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of the D5N50-VB is 1000mΩ at VGS=10V, which is suitable for switching operations in high-voltage applications. Its maximum continuous drain current (ID) is 5A, which can meet medium current requirements. The device uses SJ_Multi-EPI technology to provide excellent high-voltage performance and reliability.
The D5N50-VB is a high-voltage N-Channel MOSFET in a TO252 package, designed for switching and control applications in high-voltage environments. Its maximum drain-source voltage (VDS) is up to 650V, enabling it to handle high-voltage loads. The gate-source voltage (VGS) range is ±30V, providing a wide range of control flexibility. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring stable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of the D5N50-VB is 1000mΩ at VGS=10V, which is suitable for switching operations in high-voltage applications. Its maximum continuous drain current (ID) is 5A, which can meet medium current requirements. The device uses SJ_Multi-EPI technology to provide excellent high-voltage performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Surface mount package, designed for high voltage applications, with good heat dissipation performance.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for high voltage switching and control.
3. **Drain-Source Voltage (VDS):** 650V
- **Description:** Maximum voltage allowed between drain and source, suitable for high voltage power supply and conversion applications.
4. **Gate-Source Voltage (VGS):** ±30V
- **Description:** Maximum voltage range allowed between gate and source, providing a wide range of control capabilities.
5. **Threshold Voltage (Vth):** 3.5V
- **Description:** Gate voltage at which MOSFET starts to turn on, suitable for high voltage control applications.
6. **On-resistance (RDS(ON)):**
- **1000mΩ @ VGS=10V:** On-resistance at VGS=10V, suitable for high-voltage switch applications.
7. **Continuous drain current (ID):** 5A
- **Description:** The maximum current that the device can continuously conduct under specific conditions.
8. **Technology:** SJ_Multi-EPI
- **Description:** Super Junction multi-epitaxial structure technology improves the efficiency and electrical performance of high-voltage MOSFETs.
1. **Package:** TO252
- **Description:** Surface mount package, designed for high voltage applications, with good heat dissipation performance.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for high voltage switching and control.
3. **Drain-Source Voltage (VDS):** 650V
- **Description:** Maximum voltage allowed between drain and source, suitable for high voltage power supply and conversion applications.
4. **Gate-Source Voltage (VGS):** ±30V
- **Description:** Maximum voltage range allowed between gate and source, providing a wide range of control capabilities.
5. **Threshold Voltage (Vth):** 3.5V
- **Description:** Gate voltage at which MOSFET starts to turn on, suitable for high voltage control applications.
6. **On-resistance (RDS(ON)):**
- **1000mΩ @ VGS=10V:** On-resistance at VGS=10V, suitable for high-voltage switch applications.
7. **Continuous drain current (ID):** 5A
- **Description:** The maximum current that the device can continuously conduct under specific conditions.
8. **Technology:** SJ_Multi-EPI
- **Description:** Super Junction multi-epitaxial structure technology improves the efficiency and electrical performance of high-voltage MOSFETs.
Domain and module applications：
Application Examples
D5N50-VB MOSFET is mainly suitable for high voltage, medium current switching and control applications. Here are some specific application examples:
1. **High voltage power conversion:**
- **Example:** In high voltage DC-DC converters, D5N50-VB can be used as the main switching element to process high voltage input signals and convert them into stable output voltages. Its 650V drain-source voltage enables it to handle high voltage inputs, while its on-resistance also ensures efficient energy conversion.
2. **Power supply system:**
- **Example:** In power supply systems, D5N50-VB can be used to control the switching of high voltage currents, such as rectification and regulation of AC power. Its high voltage tolerance and good electrical performance ensure the stability and reliability of the system.
3. **Industrial control:**
- **Example:** In the control system of industrial equipment, D5N50-VB can be used for high voltage drive and switch control. Its high voltage resistance makes it suitable for scenarios such as high-voltage motor drive and high-voltage relay control.
4. **Home Appliances and Consumer Electronics:**
- **Example:** In the power management of home appliances such as TVs and refrigerators, the D5N50-VB can be used in high-voltage power modules to provide stable voltage control and switching functions. Its high voltage handling capability and excellent electrical performance ensure the safe and efficient operation of the equipment.
The high voltage capability and good switching performance of the D5N50-VB MOSFET make it an ideal choice for a variety of high voltage applications. Its excellent performance and reliability excel in high voltage control and conversion applications.
D5N50-VB MOSFET is mainly suitable for high voltage, medium current switching and control applications. Here are some specific application examples:
1. **High voltage power conversion:**
- **Example:** In high voltage DC-DC converters, D5N50-VB can be used as the main switching element to process high voltage input signals and convert them into stable output voltages. Its 650V drain-source voltage enables it to handle high voltage inputs, while its on-resistance also ensures efficient energy conversion.
2. **Power supply system:**
- **Example:** In power supply systems, D5N50-VB can be used to control the switching of high voltage currents, such as rectification and regulation of AC power. Its high voltage tolerance and good electrical performance ensure the stability and reliability of the system.
3. **Industrial control:**
- **Example:** In the control system of industrial equipment, D5N50-VB can be used for high voltage drive and switch control. Its high voltage resistance makes it suitable for scenarios such as high-voltage motor drive and high-voltage relay control.
4. **Home Appliances and Consumer Electronics:**
- **Example:** In the power management of home appliances such as TVs and refrigerators, the D5N50-VB can be used in high-voltage power modules to provide stable voltage control and switching functions. Its high voltage handling capability and excellent electrical performance ensure the safe and efficient operation of the equipment.
The high voltage capability and good switching performance of the D5N50-VB MOSFET make it an ideal choice for a variety of high voltage applications. Its excellent performance and reliability excel in high voltage control and conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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