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D538-VB Product details
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D538-VB MOSFET Product Introduction
The D538-VB is a single N-channel MOSFET in a TO252 package and is designed using advanced Trench technology. It features a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 100A, as well as very low on-resistance. These features make the D538-VB particularly suitable for applications that require high current and high efficiency switching performance. Its high current carrying capacity and low power consumption make it an ideal choice for power management and high power switch control.
The D538-VB is a single N-channel MOSFET in a TO252 package and is designed using advanced Trench technology. It features a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 100A, as well as very low on-resistance. These features make the D538-VB particularly suitable for applications that require high current and high efficiency switching performance. Its high current carrying capacity and low power consumption make it an ideal choice for power management and high power switch control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
D538-VB MOSFET detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications：
D538-VB MOSFET Applications and Modules
The superior performance of D538-VB MOSFET makes it suitable for multiple high-current, high-efficiency application scenarios. Here are some typical application examples:
1. **Power Management**: D538-VB is an ideal choice for high-efficiency DC-DC converters and switching power supplies. Its low on-resistance and high current capability enable it to reduce power consumption during power conversion and improve the overall energy efficiency of the system.
2. **Battery Management Systems**: In battery management systems, D538-VB can be used to handle high-current charging and discharging operations. Its high current carrying capacity and low power consumption characteristics help protect battery packs from over-current and over-voltage conditions, ensuring battery safety and life.
3. **Automotive Electronics**: D538-VB is suitable for high-current control applications in automotive electronic systems, such as power seats, power windows and other medium-to-high power load control. Its high withstand voltage and low on-resistance characteristics meet the stringent requirements of the automotive industry for component reliability.
4. **Industrial Control**: In industrial automation and motor drive control, the D538-VB provides a high-performance and high-reliability solution. Its stability when handling high-current loads makes it suitable for applications requiring high power and long life in industrial environments.
Through these application examples, the D538-VB MOSFET demonstrates its excellent performance in high-current and high-efficiency applications, making it a reliable choice for power management, automotive electronics, and industrial control.
The superior performance of D538-VB MOSFET makes it suitable for multiple high-current, high-efficiency application scenarios. Here are some typical application examples:
1. **Power Management**: D538-VB is an ideal choice for high-efficiency DC-DC converters and switching power supplies. Its low on-resistance and high current capability enable it to reduce power consumption during power conversion and improve the overall energy efficiency of the system.
2. **Battery Management Systems**: In battery management systems, D538-VB can be used to handle high-current charging and discharging operations. Its high current carrying capacity and low power consumption characteristics help protect battery packs from over-current and over-voltage conditions, ensuring battery safety and life.
3. **Automotive Electronics**: D538-VB is suitable for high-current control applications in automotive electronic systems, such as power seats, power windows and other medium-to-high power load control. Its high withstand voltage and low on-resistance characteristics meet the stringent requirements of the automotive industry for component reliability.
4. **Industrial Control**: In industrial automation and motor drive control, the D538-VB provides a high-performance and high-reliability solution. Its stability when handling high-current loads makes it suitable for applications requiring high power and long life in industrial environments.
Through these application examples, the D538-VB MOSFET demonstrates its excellent performance in high-current and high-efficiency applications, making it a reliable choice for power management, automotive electronics, and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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