D526-VB Product details
Product introduction:
D526-VB is a high-performance single N-channel MOSFET with TO252 package and advanced trench technology. This MOSFET is designed for low voltage, high current applications, with a drain-source voltage (VDS) of 30V and extremely low on-resistance (RDS(ON)). Its low on-resistance enables it to operate efficiently under high current conditions, while its low threshold voltage (Vth) ensures that it can be turned on at a lower gate voltage. D526-VB is suitable for applications that require high current handling capabilities and low power consumption, and can effectively reduce power losses in the circuit.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 4.5V
**On-resistance (RDS(ON))**: 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench technology (Trench)
Domain and module applications:
The characteristics of D526-VB MOSFET make it suitable for multiple high-performance and high-current application fields. The following are several major application examples:
1. **High-efficiency power management**: D526-VB has excellent performance in DC-DC converters and power management modules. Due to its extremely low on-resistance, it can significantly reduce power loss and improve system efficiency. It is suitable for applications that require efficient power conversion, such as power modules for high-performance computing and communication equipment.
2. **Electric vehicle power system**: In electric vehicles, D526-VB can be used in battery management systems, motor drives, and high-power power modules. Its high current handling capability and low on-resistance can ensure high efficiency of batteries and motors at work, optimizing the overall performance and endurance of electric vehicles.
3. **Industrial control**: D526-VB is suitable for high-current switching applications in industrial control systems. Its low power consumption characteristics and high current capability make it perform well in motor control, drive circuits and other high-power applications.
4. **Server and Data Center Power Supplies**: In data center and server power modules, the D526-VB can be used as a high-efficiency power switch. Its low on-resistance helps reduce energy losses and improve the overall efficiency of the power module to meet the requirements of high current loads.
5. **Battery Protection Circuits**: The D526-VB can also be used in battery protection circuits. In these applications, MOSFETs need to switch quickly and handle large currents to protect batteries from overcurrent and overheating. The D526-VB is able to perform these tasks effectively with its high current capability and low power consumption.
These application examples show the wide applicability of the D526-VB MOSFET in a variety of high-current, high-efficiency applications, demonstrating its key role in modern electronic systems.
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