中文
English
D510-VB Product details
Back to previous pageProduct introduction：
D510-VB MOSFET Product Introduction
The D510-VB is a high-performance N-Channel MOSFET in a TO252 package, designed to handle high current and low resistance applications. Its maximum drain-source voltage (VDS) is 30V, suitable for medium voltage environments. The gate-source voltage (VGS) range is ±20V, providing a wide range of control flexibility. The device has a threshold voltage (Vth) of 1.7V, enabling it to turn on at relatively low gate voltages. The on-resistance (RDS(ON)) of the D510-VB is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, showing its excellent turn-on characteristics in high current applications. Its maximum continuous drain current (ID) is 100A, which can meet high current requirements. The D510-VB uses Trench technology to provide excellent electrical performance and thermal management capabilities.
The D510-VB is a high-performance N-Channel MOSFET in a TO252 package, designed to handle high current and low resistance applications. Its maximum drain-source voltage (VDS) is 30V, suitable for medium voltage environments. The gate-source voltage (VGS) range is ±20V, providing a wide range of control flexibility. The device has a threshold voltage (Vth) of 1.7V, enabling it to turn on at relatively low gate voltages. The on-resistance (RDS(ON)) of the D510-VB is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, showing its excellent turn-on characteristics in high current applications. Its maximum continuous drain current (ID) is 100A, which can meet high current requirements. The D510-VB uses Trench technology to provide excellent electrical performance and thermal management capabilities.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Compact surface mount package with optimized heat dissipation for high current applications.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration for switching power supplies and high current amplifiers.
3. **Drain-Source Voltage (VDS):** 30V
- **Description:** Maximum voltage allowed between drain and source, suitable for medium voltage applications.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** Maximum voltage range allowed between gate and source, providing greater control flexibility.
5. **Threshold voltage (Vth):** 1.7V
- **Description:** The gate voltage at which the MOSFET starts to conduct. A lower threshold voltage ensures that the device is turned on at a lower voltage.
6. **On-resistance (RDS(ON)):**
- **3mΩ @ VGS=4.5V:** On-resistance at VGS=4.5V.
- **2mΩ @ VGS=10V:** On-resistance at VGS=10V.
7. **Continuous drain current (ID):** 100A
- **Description:** The maximum current that the device can continuously conduct under specific conditions.
8. **Technology:** Trench
- **Description:** Using Trench technology to reduce on-resistance, improve efficiency and thermal performance.
1. **Package:** TO252
- **Description:** Compact surface mount package with optimized heat dissipation for high current applications.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration for switching power supplies and high current amplifiers.
3. **Drain-Source Voltage (VDS):** 30V
- **Description:** Maximum voltage allowed between drain and source, suitable for medium voltage applications.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** Maximum voltage range allowed between gate and source, providing greater control flexibility.
5. **Threshold voltage (Vth):** 1.7V
- **Description:** The gate voltage at which the MOSFET starts to conduct. A lower threshold voltage ensures that the device is turned on at a lower voltage.
6. **On-resistance (RDS(ON)):**
- **3mΩ @ VGS=4.5V:** On-resistance at VGS=4.5V.
- **2mΩ @ VGS=10V:** On-resistance at VGS=10V.
7. **Continuous drain current (ID):** 100A
- **Description:** The maximum current that the device can continuously conduct under specific conditions.
8. **Technology:** Trench
- **Description:** Using Trench technology to reduce on-resistance, improve efficiency and thermal performance.
Domain and module applications：
Application Examples
D510-VB MOSFET is suitable for various applications with high current and low resistance. Here are some specific application examples:
1. **Power Management:**
- **Example:** In high current DC-DC converters, D510-VB can be used as the main switching element, responsible for current conversion and management. Its low on-resistance ensures efficient energy transfer and reduces power loss and heat generation.
2. **Motor Drive:**
- **Example:** In motor drive circuits, D510-VB can be used for high current motor control, providing stable switching operation and efficient energy transfer, ensuring smooth operation of the motor under high load.
3. **High Power LED Lighting:**
- **Example:** In high power LED lighting systems, D510-VB can be used to control the power supply of LEDs, provide stable current and reduce power loss, improving overall lighting efficiency.
4. **Consumer Electronics:**
- **Example:** In the power management systems of consumer electronics such as smartphones and laptops, the D510-VB can provide efficient power control and thermal management to ensure the stability and performance of the device under high power demands.
With its high current capability and low on-resistance, the D510-VB MOSFET is an ideal choice for applications that require high efficiency and excellent thermal management. Its excellent electrical performance enables it to perform well in a variety of high-current, high-power applications.
D510-VB MOSFET is suitable for various applications with high current and low resistance. Here are some specific application examples:
1. **Power Management:**
- **Example:** In high current DC-DC converters, D510-VB can be used as the main switching element, responsible for current conversion and management. Its low on-resistance ensures efficient energy transfer and reduces power loss and heat generation.
2. **Motor Drive:**
- **Example:** In motor drive circuits, D510-VB can be used for high current motor control, providing stable switching operation and efficient energy transfer, ensuring smooth operation of the motor under high load.
3. **High Power LED Lighting:**
- **Example:** In high power LED lighting systems, D510-VB can be used to control the power supply of LEDs, provide stable current and reduce power loss, improving overall lighting efficiency.
4. **Consumer Electronics:**
- **Example:** In the power management systems of consumer electronics such as smartphones and laptops, the D510-VB can provide efficient power control and thermal management to ensure the stability and performance of the device under high power demands.
With its high current capability and low on-resistance, the D510-VB MOSFET is an ideal choice for applications that require high efficiency and excellent thermal management. Its excellent electrical performance enables it to perform well in a variety of high-current, high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
