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D50N06ZA-VB Product details
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Product Introduction
D50N06ZA-VB is a high-performance single-channel N-type MOSFET with TO252 package type and advanced trench technology. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, making it suitable for medium voltage applications. Its turn-on voltage (Vth) is 2.5V, and its on-resistance (RDS(ON)) is 13mΩ when the gate drive voltage is 4.5V, which is further reduced to 10mΩ at 10V. With a maximum drain current (ID) of 58A, the device has excellent conduction performance and high current handling capability, making it an ideal choice for efficient power management and drive applications.
D50N06ZA-VB is a high-performance single-channel N-type MOSFET with TO252 package type and advanced trench technology. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, making it suitable for medium voltage applications. Its turn-on voltage (Vth) is 2.5V, and its on-resistance (RDS(ON)) is 13mΩ when the gate drive voltage is 4.5V, which is further reduced to 10mΩ at 10V. With a maximum drain current (ID) of 58A, the device has excellent conduction performance and high current handling capability, making it an ideal choice for efficient power management and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology type**: Trench Technology
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology type**: Trench Technology
Domain and module applications：
Applications and Modules
The D50N06ZA-VB MOSFET has high efficiency conduction performance and strong current handling capability, and can play a key role in many fields:
1. **Power Management System**: The D50N06ZA-VB is suitable for power management systems such as switching power supplies and DC-DC converters. Its low on-resistance enables it to effectively reduce power consumption and improve system efficiency, especially in medium voltage applications.
2. **Motor Drive Control**: In power tools, electric vehicles and other applications that require efficient motor drive, the D50N06ZA-VB can be used as a switching element in the motor drive circuit. Its high current handling capability ensures smooth operation and high performance output of the motor.
3. **LED Lighting Driver**: The D50N06ZA-VB can be used in LED lighting systems as a key component of the driver circuit. Its low RDS(ON) value helps reduce energy loss, improve lighting efficiency, and extend the life of the LED.
4. **Consumer Electronics**: This MOSFET is suitable for power management and power conversion modules in consumer electronic devices such as smartphones, tablets, and laptops, and can provide efficient power transmission and stable operating performance.
The high performance and flexible applicability of D50N06ZA-VB make it a reliable solution in a wide range of power management and drive control fields, providing design engineers with more choices in high-performance applications.
The D50N06ZA-VB MOSFET has high efficiency conduction performance and strong current handling capability, and can play a key role in many fields:
1. **Power Management System**: The D50N06ZA-VB is suitable for power management systems such as switching power supplies and DC-DC converters. Its low on-resistance enables it to effectively reduce power consumption and improve system efficiency, especially in medium voltage applications.
2. **Motor Drive Control**: In power tools, electric vehicles and other applications that require efficient motor drive, the D50N06ZA-VB can be used as a switching element in the motor drive circuit. Its high current handling capability ensures smooth operation and high performance output of the motor.
3. **LED Lighting Driver**: The D50N06ZA-VB can be used in LED lighting systems as a key component of the driver circuit. Its low RDS(ON) value helps reduce energy loss, improve lighting efficiency, and extend the life of the LED.
4. **Consumer Electronics**: This MOSFET is suitable for power management and power conversion modules in consumer electronic devices such as smartphones, tablets, and laptops, and can provide efficient power transmission and stable operating performance.
The high performance and flexible applicability of D50N06ZA-VB make it a reliable solution in a wide range of power management and drive control fields, providing design engineers with more choices in high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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