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D50N03L-VB Product details
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D50N03L-VB MOSFET Product Introduction
The D50N03L-VB is a single N-channel MOSFET in a TO251 package, designed using advanced Trench technology to provide excellent performance at low on-resistance and high current handling capability. With a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 50A, this MOSFET is ideal for applications that require low on-resistance and efficient switching performance, such as power management and automotive electronic systems.
The D50N03L-VB is a single N-channel MOSFET in a TO251 package, designed using advanced Trench technology to provide excellent performance at low on-resistance and high current handling capability. With a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 50A, this MOSFET is ideal for applications that require low on-resistance and efficient switching performance, such as power management and automotive electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
D50N03L-VB MOSFET Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technology type**: Trench
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technology type**: Trench
Domain and module applications：
D50N03L-VB MOSFET Applications and Modules
The D50N03L-VB MOSFET has low on-resistance and high current handling capability, making it an ideal choice in many fields and applications. Here are some typical application scenarios:
1. **Power Management**: D50N03L-VB performs well in switching power supplies and DC-DC converters. Its low on-resistance helps improve overall energy efficiency, reduce power consumption, and provide reliable switching control in efficient power management.
2. **Automotive Electronics**: In automotive electronic systems, D50N03L-VB can be used for medium power applications such as electric seat adjustment and electric window control. Its high current handling capability and low voltage control enable it to perform stable and reliable performance in these applications.
3. **Consumer Electronics**: The D50N03L-VB is suitable for battery-powered portable devices such as smartphones, laptops, etc. Its high-efficiency characteristics ensure low power consumption and long battery life when the device is working.
4. **Industrial Control**: The D50N03L-VB can also be applied to load switches and motor drive control in industrial automation systems. Its high current handling capability and reliable switching performance make it suitable for use in industrial environments, especially control circuits that require high efficiency and long life.
Through these application examples, the D50N03L-VB MOSFET fully demonstrates its superior performance in low-voltage, high-current applications, and is a key component for a variety of power management, automotive electronics, and industrial control tasks.
The D50N03L-VB MOSFET has low on-resistance and high current handling capability, making it an ideal choice in many fields and applications. Here are some typical application scenarios:
1. **Power Management**: D50N03L-VB performs well in switching power supplies and DC-DC converters. Its low on-resistance helps improve overall energy efficiency, reduce power consumption, and provide reliable switching control in efficient power management.
2. **Automotive Electronics**: In automotive electronic systems, D50N03L-VB can be used for medium power applications such as electric seat adjustment and electric window control. Its high current handling capability and low voltage control enable it to perform stable and reliable performance in these applications.
3. **Consumer Electronics**: The D50N03L-VB is suitable for battery-powered portable devices such as smartphones, laptops, etc. Its high-efficiency characteristics ensure low power consumption and long battery life when the device is working.
4. **Industrial Control**: The D50N03L-VB can also be applied to load switches and motor drive control in industrial automation systems. Its high current handling capability and reliable switching performance make it suitable for use in industrial environments, especially control circuits that require high efficiency and long life.
Through these application examples, the D50N03L-VB MOSFET fully demonstrates its superior performance in low-voltage, high-current applications, and is a key component for a variety of power management, automotive electronics, and industrial control tasks.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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