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D508-VB Product details
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D508-VB MOSFET Product Introduction
D508-VB is a high-performance N-channel MOSFET in TO252 package based on advanced trench technology. The device is designed with ultra-low on-resistance and high current handling capability, enabling efficient current control at low gate voltage. D508-VB is particularly suitable for high-current applications requiring high efficiency and reliability, such as power management and high-power switching devices.
D508-VB is a high-performance N-channel MOSFET in TO252 package based on advanced trench technology. The device is designed with ultra-low on-resistance and high current handling capability, enabling efficient current control at low gate voltage. D508-VB is particularly suitable for high-current applications requiring high efficiency and reliability, such as power management and high-power switching devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
D508-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **High Power Power Management**: The D508-VB has extremely low on-resistance and high current capability, making it an excellent choice for switch mode power supplies (SMPS), DC-DC converters, and high power adapters. It can effectively reduce power loss and improve system efficiency, and is suitable for high power devices that require precise current control, such as server power supplies and power management systems for communication equipment.
2. **Automotive Electronics**: The D508-VB is widely used in automotive electronics, especially in high current applications such as electric power steering systems, on-board chargers, and electric pump drives. Its high current carrying capacity and low on-resistance ensure stability and reliability in harsh automotive environments.
3. **Industrial Automation and Control Systems**: In the field of industrial control and automation, the D508-VB can be used for industrial motor control and high power switching applications. It can still provide excellent performance under high load conditions, and is suitable for industrial power tools, electric actuators, and other automation equipment that requires high current handling capabilities.
4. **Consumer electronics and portable devices**: D508-VB is also suitable for power management modules in high-performance consumer electronics and portable devices. Its efficient current control characteristics enable it to optimize the battery life of the device and is suitable for power modules in notebook computers, tablets and high-power portable devices.
With its low on-resistance and high current capability, D508-VB MOSFET has demonstrated excellent performance in power management, automotive electronics, industrial control and consumer electronics, and is an ideal choice for a variety of high-performance applications.
1. **High Power Power Management**: The D508-VB has extremely low on-resistance and high current capability, making it an excellent choice for switch mode power supplies (SMPS), DC-DC converters, and high power adapters. It can effectively reduce power loss and improve system efficiency, and is suitable for high power devices that require precise current control, such as server power supplies and power management systems for communication equipment.
2. **Automotive Electronics**: The D508-VB is widely used in automotive electronics, especially in high current applications such as electric power steering systems, on-board chargers, and electric pump drives. Its high current carrying capacity and low on-resistance ensure stability and reliability in harsh automotive environments.
3. **Industrial Automation and Control Systems**: In the field of industrial control and automation, the D508-VB can be used for industrial motor control and high power switching applications. It can still provide excellent performance under high load conditions, and is suitable for industrial power tools, electric actuators, and other automation equipment that requires high current handling capabilities.
4. **Consumer electronics and portable devices**: D508-VB is also suitable for power management modules in high-performance consumer electronics and portable devices. Its efficient current control characteristics enable it to optimize the battery life of the device and is suitable for power modules in notebook computers, tablets and high-power portable devices.
With its low on-resistance and high current capability, D508-VB MOSFET has demonstrated excellent performance in power management, automotive electronics, industrial control and consumer electronics, and is an ideal choice for a variety of high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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