D504-VB Product details
Product introduction:
D504-VB is a single N-channel MOSFET with TO252 package and advanced trench technology. This MOSFET is designed for low voltage, high current applications, with a drain-source voltage (VDS) of 20V and very low on-resistance (RDS(ON)), ensuring efficient operation under high current conditions. The gate threshold voltage (Vth) range of D504-VB is wide (0.5~1.5V), and it can be turned on at a lower gate drive voltage, which is suitable for application scenarios that require fast switching and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 2.5V
**On-resistance (RDS(ON))**: 4.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 100A
- **Technology type**: Trench technology (Trench)
Domain and module applications:
Due to its low on-resistance and high current handling capability, D504-VB MOSFET is suitable for multiple fields and modules. Here are some typical applications:
1. **Battery management system**: In lithium-ion battery management systems, D504-VB can be used as a core component for battery protection and charging control. Its low on-resistance and high current capability ensure that the battery can efficiently transmit power during the charging and discharging process, reduce losses, and extend battery life.
2. **Portable electronic devices**: Due to its ability to operate at low gate drive voltages, D504-VB is ideal for use in power management modules for portable electronic devices such as smartphones and tablets. These devices often require efficient power management in a compact space, and the low power consumption characteristics of D504-VB make it excel in these applications.
3. **DC-DC buck converter**: In low-voltage, high-current DC-DC buck converters, D504-VB can provide extremely high efficiency. Its low on-resistance helps reduce power losses, allowing the converter to stably deliver power to the load, making it suitable for applications such as power adapters and LED drivers.
4. **Automotive Electronic Systems**: In automotive electronic systems, the D504-VB can be used for auxiliary power supplies and low-voltage motor control modules. These systems require MOSFETs with high current handling capabilities and low loss characteristics to ensure efficient operation and reliability of automotive electronic equipment.
5. **Server Power Modules**: In high-performance computing systems, the D504-VB can be used in power modules for servers and data centers. Its low on-resistance can reduce power losses, improve system energy efficiency, and meet the needs of high-current applications.
Through these application examples, the D504-VB MOSFET demonstrates its important role in efficient power management and high current transmission, and is suitable for various modern electronic systems that require low-voltage and efficient control.
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