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D502-VB Product details

Product introduction:

D502-VB MOSFET Product Introduction



The D502-VB is a high-performance N-channel MOSFET in a TO252 package, designed for low-voltage, high-current applications. The device has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, ensuring stability in low-voltage operating environments. The threshold voltage (Vth) range of the D502-VB is 0.5V to 1.5V, enabling efficient switching operation at very low gate voltages. The MOSFET has an extremely low on-resistance (RDS(ON)) of 6mΩ at a 2.5V gate drive and 4.5mΩ at a 4.5V gate drive, and can withstand a continuous drain current (ID) of up to 100A, making the D502-VB particularly good in low-voltage, high-current applications. Utilizing advanced trench technology, the device provides excellent switching performance and low conduction losses, making it an ideal choice for a variety of high-efficiency power electronics applications.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
D502-VB MOSFET Detailed parameter description



- **Package type**: TO252

- **Configuration**: Single N-channel

- **Drain-source voltage (VDS)**: 20V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**: 0.5V ~ 1.5V

- **On-resistance (RDS(ON))**:

- 6mΩ @ VGS=2.5V

- 4.5mΩ @ VGS=4.5V

- **Drain current (ID)**: 100A

- **Technology**: Trench technology



Domain and module applications:

D502-VB MOSFET Applications and Modules



1. **Low Voltage Power Management**: The low on-resistance and high current handling capability of the D502-VB make it an excellent choice for low voltage power management modules such as DC-DC converters and buck converters. Its low threshold voltage ensures fast and efficient switching at low gate voltages, improving the overall efficiency of the system.



2. **High Current Motor Drive**: In low voltage and high current motor drive applications such as motor control for power tools and portable devices, the D502-VB provides excellent current handling capabilities. Its low on-resistance and high current handling capability ensure stable operation under high load conditions while reducing energy losses.



3. **Battery Protection Module**: The D502-VB is suitable for protection circuits for lithium-ion battery packs, especially in applications that require low voltage and high current protection. Its low threshold voltage and low on-resistance ensure an efficient current path while avoiding performance loss due to voltage drops.



4. **Load switch**: D502-VB is also suitable for low-voltage load switch applications that require fast response. Its high current capability and low on-resistance enable it to easily handle the switching operation of high-power loads, such as power switch control in consumer electronic devices.



In summary, D502-VB MOSFET is widely used in low-voltage power management, high-current motor drive, battery protection module and low-voltage load switch with its low conduction loss, low-voltage high-efficiency switching performance and high current handling capability. It is an indispensable key device in many electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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