D502-VB Product details
Product introduction:
The D502-VB is a high-performance N-channel MOSFET in a TO252 package, designed for low-voltage, high-current applications. The device has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, ensuring stability in low-voltage operating environments. The threshold voltage (Vth) range of the D502-VB is 0.5V to 1.5V, enabling efficient switching operation at very low gate voltages. The MOSFET has an extremely low on-resistance (RDS(ON)) of 6mΩ at a 2.5V gate drive and 4.5mΩ at a 4.5V gate drive, and can withstand a continuous drain current (ID) of up to 100A, making the D502-VB particularly good in low-voltage, high-current applications. Utilizing advanced trench technology, the device provides excellent switching performance and low conduction losses, making it an ideal choice for a variety of high-efficiency power electronics applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications:
1. **Low Voltage Power Management**: The low on-resistance and high current handling capability of the D502-VB make it an excellent choice for low voltage power management modules such as DC-DC converters and buck converters. Its low threshold voltage ensures fast and efficient switching at low gate voltages, improving the overall efficiency of the system.
2. **High Current Motor Drive**: In low voltage and high current motor drive applications such as motor control for power tools and portable devices, the D502-VB provides excellent current handling capabilities. Its low on-resistance and high current handling capability ensure stable operation under high load conditions while reducing energy losses.
3. **Battery Protection Module**: The D502-VB is suitable for protection circuits for lithium-ion battery packs, especially in applications that require low voltage and high current protection. Its low threshold voltage and low on-resistance ensure an efficient current path while avoiding performance loss due to voltage drops.
4. **Load switch**: D502-VB is also suitable for low-voltage load switch applications that require fast response. Its high current capability and low on-resistance enable it to easily handle the switching operation of high-power loads, such as power switch control in consumer electronic devices.
In summary, D502-VB MOSFET is widely used in low-voltage power management, high-current motor drive, battery protection module and low-voltage load switch with its low conduction loss, low-voltage high-efficiency switching performance and high current handling capability. It is an indispensable key device in many electronic applications.
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