D4S60-VB Product details
Product introduction:
The D4S60-VB is a high voltage N-channel MOSFET in a TO-252 package, designed for applications that require high voltage tolerance and reliability. With a drain-source voltage (VDS) of 650V, the device is suitable for applications that need to handle high voltages, such as switching power supplies and motor control. The D4S60-VB utilizes SJ_Multi-EPI (super junction multi-epitaxial) technology to maintain a low on-resistance (RDS(ON)) at a higher gate-source voltage (VGS), improving overall switching efficiency. Its design ensures excellent performance under harsh operating conditions.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI (Superjunction Multi-Epi)
Domain and module applications:
1. **Switching Power Supply (SMPS)**: The D4S60-VB is ideal for switching power supply modules, especially in applications that require handling high voltages. Its 650V withstand voltage characteristics and SJ_Multi-EPI technology support efficient energy conversion, reduce switching losses, and improve the overall efficiency of the system. It is suitable for industrial power supplies, LED drivers, and communication power modules.
2. **Motor Drive and Control**: In high-voltage motor drive systems, the D4S60-VB can be used as a reliable switching element, especially for motor applications that require high voltage control. Its low on-resistance and high withstand voltage characteristics enable it to effectively control motor start-up and operation while maintaining system stability and efficiency.
3. **Industrial Inverter**: This MOSFET is suitable for the field of industrial inverters, especially in situations where high voltage conversion and control are required. The high voltage tolerance and low RDS(ON) of the D4S60-VB enable it to provide efficient power conversion, suitable for high-voltage applications such as solar inverters and electric vehicle charging piles.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, the D4S60-VB can be used as a key high-voltage switching element for power conversion and distribution. Its 650V withstand voltage characteristics enable it to handle high-voltage inputs, ensuring stable output and reliability of the power supply.
Through these application examples, the D4S60-VB demonstrates its wide applicability in switching power supplies, motor control, industrial inverters, and UPS systems, and can provide stable and reliable power management solutions for a variety of high-voltage, high-efficiency electronic devices.
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