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D4NK80Z-VB Product details
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D4NK80Z-VB MOSFET Product Introduction
The D4NK80Z-VB is a high-voltage N-Channel MOSFET in a TO252 package designed for high-voltage applications. Its maximum drain-source voltage (VDS) is up to 800V, suitable for applications requiring high-voltage isolation and switching. The gate-source voltage (VGS) range is ±30V, which can provide reliable control under high-voltage conditions. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring stable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of the D4NK80Z-VB is 2600mΩ at VGS=10V, which enables it to maintain low leakage current when handling high-voltage switching applications. Its maximum continuous drain current (ID) is 2A, suitable for low-current high-voltage applications. The D4NK80Z-VB uses SJ_Multi-EPI technology to improve the performance of the device, especially in high-voltage applications.
The D4NK80Z-VB is a high-voltage N-Channel MOSFET in a TO252 package designed for high-voltage applications. Its maximum drain-source voltage (VDS) is up to 800V, suitable for applications requiring high-voltage isolation and switching. The gate-source voltage (VGS) range is ±30V, which can provide reliable control under high-voltage conditions. The threshold voltage (Vth) of this MOSFET is 3.5V, ensuring stable turn-on at the appropriate gate voltage. The on-resistance (RDS(ON)) of the D4NK80Z-VB is 2600mΩ at VGS=10V, which enables it to maintain low leakage current when handling high-voltage switching applications. Its maximum continuous drain current (ID) is 2A, suitable for low-current high-voltage applications. The D4NK80Z-VB uses SJ_Multi-EPI technology to improve the performance of the device, especially in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Compact surface mount package designed for high voltage applications with good heat dissipation.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for switching power supplies and high voltage conversion applications.
3. **Drain-Source Voltage (VDS):** 800V
- **Description:** Maximum voltage allowed between drain and source, suitable for high voltage applications.
4. **Gate-Source Voltage (VGS):** ±30V
- **Description:** Maximum voltage range allowed between gate and source, providing greater control flexibility.
5. **Threshold Voltage (Vth):** 3.5V
- **Description:** Gate voltage at which MOSFET starts to turn on, suitable for use in high voltage control circuits.
6. **On-resistance (RDS(ON)):**
- **2600mΩ @ VGS=10V:** On-resistance at VGS=10V.
7. **Continuous drain current (ID):** 2A
- **Description:** The maximum current that the device can continuously conduct under high voltage.
8. **Technology:** SJ_Multi-EPI
- **Description:** Super Junction multi-epitaxial structure technology, designed to improve the efficiency and electrical performance of high-voltage MOSFETs.
1. **Package:** TO252
- **Description:** Compact surface mount package designed for high voltage applications with good heat dissipation.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for switching power supplies and high voltage conversion applications.
3. **Drain-Source Voltage (VDS):** 800V
- **Description:** Maximum voltage allowed between drain and source, suitable for high voltage applications.
4. **Gate-Source Voltage (VGS):** ±30V
- **Description:** Maximum voltage range allowed between gate and source, providing greater control flexibility.
5. **Threshold Voltage (Vth):** 3.5V
- **Description:** Gate voltage at which MOSFET starts to turn on, suitable for use in high voltage control circuits.
6. **On-resistance (RDS(ON)):**
- **2600mΩ @ VGS=10V:** On-resistance at VGS=10V.
7. **Continuous drain current (ID):** 2A
- **Description:** The maximum current that the device can continuously conduct under high voltage.
8. **Technology:** SJ_Multi-EPI
- **Description:** Super Junction multi-epitaxial structure technology, designed to improve the efficiency and electrical performance of high-voltage MOSFETs.
Domain and module applications：
Application Examples
D4NK80Z-VB MOSFET is mainly suitable for high voltage, low current application scenarios. Here are some specific application examples:
1. **Switching Power Supply:**
- **Example:** In a switching power supply (SMPS), the D4NK80Z-VB can be used for the switching circuit on the high voltage input side. Its high drain-source voltage of 800V makes it suitable for the conversion and isolation of AC power input, providing reliable high voltage switching function.
2. **Lighting Equipment:**
- **Example:** In an LED lighting drive circuit, the D4NK80Z-VB can be used as a switching device on the high voltage side to control the brightness and power of the LED lamp. Its high voltage characteristics ensure stability and safety during long-term operation.
3. **Battery Charger:**
- **Example:** In a high voltage battery charger, the D4NK80Z-VB can be used for voltage conversion and regulation to ensure a stable high voltage power supply for the battery. Its super junction technology provides excellent efficiency and low heat dissipation at high voltages.
4. **Industrial Control Systems:**
- **Example:** In industrial control systems, the D4NK80Z-VB can be used to control the switching of high voltage devices such as motor drives and high voltage relays. Its high voltage handling capability and low on-resistance excel in industrial applications.
The D4NK80Z-VB MOSFET is a device designed for high voltage, low current applications, suitable for use in scenarios requiring efficient, high voltage control. Its excellent electrical performance and reliability make it an ideal choice for high voltage switching and conversion applications.
D4NK80Z-VB MOSFET is mainly suitable for high voltage, low current application scenarios. Here are some specific application examples:
1. **Switching Power Supply:**
- **Example:** In a switching power supply (SMPS), the D4NK80Z-VB can be used for the switching circuit on the high voltage input side. Its high drain-source voltage of 800V makes it suitable for the conversion and isolation of AC power input, providing reliable high voltage switching function.
2. **Lighting Equipment:**
- **Example:** In an LED lighting drive circuit, the D4NK80Z-VB can be used as a switching device on the high voltage side to control the brightness and power of the LED lamp. Its high voltage characteristics ensure stability and safety during long-term operation.
3. **Battery Charger:**
- **Example:** In a high voltage battery charger, the D4NK80Z-VB can be used for voltage conversion and regulation to ensure a stable high voltage power supply for the battery. Its super junction technology provides excellent efficiency and low heat dissipation at high voltages.
4. **Industrial Control Systems:**
- **Example:** In industrial control systems, the D4NK80Z-VB can be used to control the switching of high voltage devices such as motor drives and high voltage relays. Its high voltage handling capability and low on-resistance excel in industrial applications.
The D4NK80Z-VB MOSFET is a device designed for high voltage, low current applications, suitable for use in scenarios requiring efficient, high voltage control. Its excellent electrical performance and reliability make it an ideal choice for high voltage switching and conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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