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D4NK50Z-VB TO252 Product details
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Product Introduction
D4NK50Z-VB is a high-voltage single-channel N-type MOSFET with a TO252 package type and planar technology. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, making it suitable for applications that require high voltage resistance. Its turn-on voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 2750mΩ at a gate drive voltage of 4.5V, which drops to 2200mΩ at 10V. The maximum drain current (ID) is 4A, allowing the D4NK50Z-VB to operate stably in a high-voltage environment, making it suitable for applications that require high voltage isolation and voltage resistance.
D4NK50Z-VB is a high-voltage single-channel N-type MOSFET with a TO252 package type and planar technology. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, making it suitable for applications that require high voltage resistance. Its turn-on voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 2750mΩ at a gate drive voltage of 4.5V, which drops to 2200mΩ at 10V. The maximum drain current (ID) is 4A, allowing the D4NK50Z-VB to operate stably in a high-voltage environment, making it suitable for applications that require high voltage isolation and voltage resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology type**: Planar Technology
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology type**: Planar Technology
Domain and module applications：
Applications and modules
The high voltage tolerance and reliable conductive characteristics of the D4NK50Z-VB MOSFET enable it to excel in multiple fields and modules:
1. **High-voltage power management**: The D4NK50Z-VB performs well in high-voltage power management systems, especially high-voltage switching power supplies and inverters. Its high drain-source voltage rating enables it to handle voltages of 650V, suitable for power switching and control in high-voltage environments.
2. **Industrial power**: In industrial power modules, the D4NK50Z-VB can be used for switching control of high-voltage power supplies, such as in power conversion equipment, where MOSFET can effectively handle high-voltage loads to ensure system stability and safety.
3. **Household appliances**: In some high-power household appliances, such as high-voltage electric heaters or air conditioners, the D4NK50Z-VB can handle high voltages and control the direction of current flow to ensure reliable operation of the equipment.
4. **Motor control system**: Despite its low current carrying capacity, the D4NK50Z-VB can be used as a high-voltage switching element in some high-voltage, low-power motor control systems, such as motor drive and control systems.
The high voltage tolerance and stability of the D4NK50Z-VB make it a reliable solution in high-voltage and high-power applications, and is suitable for a variety of design scenarios requiring high voltage isolation and withstand voltage.
The high voltage tolerance and reliable conductive characteristics of the D4NK50Z-VB MOSFET enable it to excel in multiple fields and modules:
1. **High-voltage power management**: The D4NK50Z-VB performs well in high-voltage power management systems, especially high-voltage switching power supplies and inverters. Its high drain-source voltage rating enables it to handle voltages of 650V, suitable for power switching and control in high-voltage environments.
2. **Industrial power**: In industrial power modules, the D4NK50Z-VB can be used for switching control of high-voltage power supplies, such as in power conversion equipment, where MOSFET can effectively handle high-voltage loads to ensure system stability and safety.
3. **Household appliances**: In some high-power household appliances, such as high-voltage electric heaters or air conditioners, the D4NK50Z-VB can handle high voltages and control the direction of current flow to ensure reliable operation of the equipment.
4. **Motor control system**: Despite its low current carrying capacity, the D4NK50Z-VB can be used as a high-voltage switching element in some high-voltage, low-power motor control systems, such as motor drive and control systems.
The high voltage tolerance and stability of the D4NK50Z-VB make it a reliable solution in high-voltage and high-power applications, and is suitable for a variety of design scenarios requiring high voltage isolation and withstand voltage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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