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D488-VB Product details
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D488-VB MOSFET Product Introduction
The D488-VB is a high-performance N-Channel MOSFET in a TO252 package suitable for medium-to-high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 40V and its gate-source voltage (VGS) is ±20V, which can cope with a variety of voltage environments. The threshold voltage (Vth) of the D488-VB is 2.5V, ensuring stable turn-on at the appropriate gate voltage. The device has an on-resistance (RDS(ON)) of 14mΩ at VGS=4.5V and 12mΩ at VGS=10V, which allows it to handle high currents while maintaining low energy losses. Its maximum continuous drain current (ID) is 55A, suitable for applications with high current requirements. The D488-VB uses Trench technology, providing excellent electrical and thermal performance to meet the needs of high-efficiency applications.
The D488-VB is a high-performance N-Channel MOSFET in a TO252 package suitable for medium-to-high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 40V and its gate-source voltage (VGS) is ±20V, which can cope with a variety of voltage environments. The threshold voltage (Vth) of the D488-VB is 2.5V, ensuring stable turn-on at the appropriate gate voltage. The device has an on-resistance (RDS(ON)) of 14mΩ at VGS=4.5V and 12mΩ at VGS=10V, which allows it to handle high currents while maintaining low energy losses. Its maximum continuous drain current (ID) is 55A, suitable for applications with high current requirements. The D488-VB uses Trench technology, providing excellent electrical and thermal performance to meet the needs of high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Compact surface mount package designed for optimized thermal performance.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration for switching power supply and amplifier applications.
3. **Drain-Source Voltage (VDS):** 40V
- **Description:** Maximum voltage allowed between drain and source.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** Maximum voltage range allowed between gate and source.
5. **Threshold Voltage (Vth):** 2.5V
- **Description:** Gate voltage at which MOSFET starts to conduct.
6. **On-resistance (RDS(ON)):**
- **14mΩ @ VGS=4.5V:** On-resistance at VGS=4.5V.
- **12mΩ @ VGS=10V:** On-resistance at VGS=10V.
7. **Continuous drain current (ID):** 55A
- **Description:** The maximum current that the device can continuously conduct under specific conditions.
8. **Technology:** Trench
- **Description:** Through Trench technology, D488-VB can significantly reduce on-resistance, improve efficiency and thermal performance.
1. **Package:** TO252
- **Description:** Compact surface mount package designed for optimized thermal performance.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration for switching power supply and amplifier applications.
3. **Drain-Source Voltage (VDS):** 40V
- **Description:** Maximum voltage allowed between drain and source.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** Maximum voltage range allowed between gate and source.
5. **Threshold Voltage (Vth):** 2.5V
- **Description:** Gate voltage at which MOSFET starts to conduct.
6. **On-resistance (RDS(ON)):**
- **14mΩ @ VGS=4.5V:** On-resistance at VGS=4.5V.
- **12mΩ @ VGS=10V:** On-resistance at VGS=10V.
7. **Continuous drain current (ID):** 55A
- **Description:** The maximum current that the device can continuously conduct under specific conditions.
8. **Technology:** Trench
- **Description:** Through Trench technology, D488-VB can significantly reduce on-resistance, improve efficiency and thermal performance.
Domain and module applications：
Application Examples
D488-VB MOSFET is suitable for various fields. Here are some specific application examples:
1. **Power Tools:**
- **Example:** In power tools, D488-VB can be used to drive motors. Its high current capability of 55A ensures stable operation of power tools under high loads, while low on-resistance helps reduce power loss and heat generation.
2. **Solar Inverters:**
- **Example:** D488-VB can be used in DC-DC conversion modules in solar inverters to ensure efficient energy conversion and transmission. Its medium voltage and high current characteristics make it ideal for handling power from solar cells.
3. **Automotive Electronics:**
- **Example:** In automotive electronic systems, such as battery management systems and on-board chargers, D488-VB is able to provide efficient current control and thermal management to meet the demanding requirements of automotive applications.
4. **Consumer Electronics:**
- **Example:** The D488-VB can be used in high-performance power management systems, such as the power management unit (PMU) of smartphones and laptops, to ensure stable operation of the device during high power demands.
The D488-VB MOSFET is ideal for medium to high power applications due to its high current handling capability and low on-resistance, making it suitable for use in applications that require high performance, low energy loss and excellent thermal management.
D488-VB MOSFET is suitable for various fields. Here are some specific application examples:
1. **Power Tools:**
- **Example:** In power tools, D488-VB can be used to drive motors. Its high current capability of 55A ensures stable operation of power tools under high loads, while low on-resistance helps reduce power loss and heat generation.
2. **Solar Inverters:**
- **Example:** D488-VB can be used in DC-DC conversion modules in solar inverters to ensure efficient energy conversion and transmission. Its medium voltage and high current characteristics make it ideal for handling power from solar cells.
3. **Automotive Electronics:**
- **Example:** In automotive electronic systems, such as battery management systems and on-board chargers, D488-VB is able to provide efficient current control and thermal management to meet the demanding requirements of automotive applications.
4. **Consumer Electronics:**
- **Example:** The D488-VB can be used in high-performance power management systems, such as the power management unit (PMU) of smartphones and laptops, to ensure stable operation of the device during high power demands.
The D488-VB MOSFET is ideal for medium to high power applications due to its high current handling capability and low on-resistance, making it suitable for use in applications that require high performance, low energy loss and excellent thermal management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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