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D472L-VB Product details
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D472L-VB MOSFET Product Introduction
The D472L-VB is a high-performance N-Channel MOSFET packaged in a TO252 package, designed for applications requiring high current and low resistance. Its maximum drain-source voltage (VDS) is 20V, suitable for handling medium voltage scenarios. The gate-source voltage (VGS) range is ±20V, providing a wide range of control flexibility. The threshold voltage (Vth) of the D472L-VB is 0.5V to 1.5V, enabling it to turn on at lower gate voltages. The device has an on-resistance (RDS(ON)) of 6mΩ measured at VGS=2.5V and an on-resistance of 4.5mΩ measured at VGS=4.5V, showing extremely low conduction losses. Its continuous drain current (ID) is 100A, suitable for high current applications. Using Trench technology, the D472L-VB provides excellent electrical performance and heat dissipation capabilities.
The D472L-VB is a high-performance N-Channel MOSFET packaged in a TO252 package, designed for applications requiring high current and low resistance. Its maximum drain-source voltage (VDS) is 20V, suitable for handling medium voltage scenarios. The gate-source voltage (VGS) range is ±20V, providing a wide range of control flexibility. The threshold voltage (Vth) of the D472L-VB is 0.5V to 1.5V, enabling it to turn on at lower gate voltages. The device has an on-resistance (RDS(ON)) of 6mΩ measured at VGS=2.5V and an on-resistance of 4.5mΩ measured at VGS=4.5V, showing extremely low conduction losses. Its continuous drain current (ID) is 100A, suitable for high current applications. Using Trench technology, the D472L-VB provides excellent electrical performance and heat dissipation capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Compact surface mount package designed for excellent heat dissipation.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration suitable for switching and amplification applications.
3. **Drain-Source Voltage (VDS):** 20V
- **Description:** The maximum voltage that can be applied between the drain and source.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source.
5. **Threshold Voltage (Vth):** 0.5V to 1.5V
- **Description:** The gate-source voltage at which the MOSFET starts to conduct.
6. **On-resistance (RDS(ON)):**
- **6mΩ @ VGS=2.5V:** The resistance between the drain and the source when VGS is 2.5V.
- **4.5mΩ @ VGS=4.5V:** The resistance between the drain and the source when VGS is 4.5V.
7. **Continuous drain current (ID):** 100A
- **Description:** The maximum continuous current that the device can conduct.
8. **Technology:** Trench
- **Description:** Technology that reduces on-resistance and improves efficiency.
1. **Package:** TO252
- **Description:** Compact surface mount package designed for excellent heat dissipation.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration suitable for switching and amplification applications.
3. **Drain-Source Voltage (VDS):** 20V
- **Description:** The maximum voltage that can be applied between the drain and source.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source.
5. **Threshold Voltage (Vth):** 0.5V to 1.5V
- **Description:** The gate-source voltage at which the MOSFET starts to conduct.
6. **On-resistance (RDS(ON)):**
- **6mΩ @ VGS=2.5V:** The resistance between the drain and the source when VGS is 2.5V.
- **4.5mΩ @ VGS=4.5V:** The resistance between the drain and the source when VGS is 4.5V.
7. **Continuous drain current (ID):** 100A
- **Description:** The maximum continuous current that the device can conduct.
8. **Technology:** Trench
- **Description:** Technology that reduces on-resistance and improves efficiency.
Domain and module applications：
Application Examples
D472L-VB MOSFET is suitable for various applications in multiple fields, here are some examples:
1. **Power Management Module:**
- **Example:** In high current DC-DC converters, D472L-VB can be used as the main switching element responsible for current conversion and management. Its low on-resistance and high current capability ensure high efficiency and low heat generation.
2. **Motor Drive:**
- **Example:** In motor control systems, D472L-VB can be used in motor drive circuits to handle high current demands and keep conduction losses low, thereby improving system efficiency and performance.
3. **Battery Management System:**
- **Example:** In battery protection and management modules, D472L-VB can be used as a switch controller to prevent overcurrent conditions and ensure stable operation of the battery. Its high current carrying capability and low RDS(ON) provide effective protection and management functions.
4. **Consumer Electronics:**
- **Example:** In consumer electronics such as smartphones and laptops, the D472L-VB can be used in power management and switching applications to ensure efficient power delivery and device performance.
The high current capability and low on-resistance of the D472L-VB MOSFET make it an ideal choice in applications that require high efficiency and excellent thermal management.
D472L-VB MOSFET is suitable for various applications in multiple fields, here are some examples:
1. **Power Management Module:**
- **Example:** In high current DC-DC converters, D472L-VB can be used as the main switching element responsible for current conversion and management. Its low on-resistance and high current capability ensure high efficiency and low heat generation.
2. **Motor Drive:**
- **Example:** In motor control systems, D472L-VB can be used in motor drive circuits to handle high current demands and keep conduction losses low, thereby improving system efficiency and performance.
3. **Battery Management System:**
- **Example:** In battery protection and management modules, D472L-VB can be used as a switch controller to prevent overcurrent conditions and ensure stable operation of the battery. Its high current carrying capability and low RDS(ON) provide effective protection and management functions.
4. **Consumer Electronics:**
- **Example:** In consumer electronics such as smartphones and laptops, the D472L-VB can be used in power management and switching applications to ensure efficient power delivery and device performance.
The high current capability and low on-resistance of the D472L-VB MOSFET make it an ideal choice in applications that require high efficiency and excellent thermal management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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