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D454Y-VB Product details
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D454Y-VB MOSFET Product Introduction
The D454Y-VB is a high-performance N-Channel MOSFET packaged in a TO252 package, designed for medium-to-high voltage and high current applications. Its maximum drain-source voltage (VDS) is 40V, suitable for handling medium voltage scenarios. The gate-source voltage (VGS) range is ±20V, providing a wide range of control flexibility. The threshold voltage (Vth) of the D454Y-VB is 2.5V, ensuring that it can be turned on at a lower gate voltage. The device has an on-resistance (RDS(ON)) of 14mΩ measured at VGS=4.5V and an on-resistance of 12mΩ measured at VGS=10V, showing extremely low conduction losses. Its continuous drain current (ID) is 55A, suitable for high current applications. Using Trench technology, the D454Y-VB provides excellent electrical performance and heat dissipation capabilities.
The D454Y-VB is a high-performance N-Channel MOSFET packaged in a TO252 package, designed for medium-to-high voltage and high current applications. Its maximum drain-source voltage (VDS) is 40V, suitable for handling medium voltage scenarios. The gate-source voltage (VGS) range is ±20V, providing a wide range of control flexibility. The threshold voltage (Vth) of the D454Y-VB is 2.5V, ensuring that it can be turned on at a lower gate voltage. The device has an on-resistance (RDS(ON)) of 14mΩ measured at VGS=4.5V and an on-resistance of 12mΩ measured at VGS=10V, showing extremely low conduction losses. Its continuous drain current (ID) is 55A, suitable for high current applications. Using Trench technology, the D454Y-VB provides excellent electrical performance and heat dissipation capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Compact surface mount package designed for excellent heat dissipation.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for switching and amplification applications.
3. **Drain-Source Voltage (VDS):** 40V
- **Description:** The maximum voltage that can be applied between the drain and source.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source.
5. **Threshold Voltage (Vth):** 2.5V
- **Description:** The gate-source voltage at which the MOSFET starts to turn on.
6. **On-resistance (RDS(ON)):**
- **14mΩ @ VGS=4.5V:** The resistance between drain and source when VGS is 4.5V.
- **12mΩ @ VGS=10V:** The resistance between drain and source when VGS is 10V.
7. **Continuous drain current (ID):** 55A
- **Description:** The maximum continuous current that the device can conduct.
8. **Technology:** Trench
- **Description:** Technology that reduces on-resistance and improves efficiency.
1. **Package:** TO252
- **Description:** Compact surface mount package designed for excellent heat dissipation.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for switching and amplification applications.
3. **Drain-Source Voltage (VDS):** 40V
- **Description:** The maximum voltage that can be applied between the drain and source.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source.
5. **Threshold Voltage (Vth):** 2.5V
- **Description:** The gate-source voltage at which the MOSFET starts to turn on.
6. **On-resistance (RDS(ON)):**
- **14mΩ @ VGS=4.5V:** The resistance between drain and source when VGS is 4.5V.
- **12mΩ @ VGS=10V:** The resistance between drain and source when VGS is 10V.
7. **Continuous drain current (ID):** 55A
- **Description:** The maximum continuous current that the device can conduct.
8. **Technology:** Trench
- **Description:** Technology that reduces on-resistance and improves efficiency.
Domain and module applications：
Application Examples
The D454Y-VB MOSFET is suitable for a variety of applications in multiple fields, and the following are some examples:
1. **Power Management Modules:**
- **Example:** In DC-DC converters, the D454Y-VB can be used as a switching element to convert high current and medium voltage power. Its low RDS(ON) and high current capability enable it to effectively reduce energy loss and improve conversion efficiency.
2. **Motor Drive:**
- **Example:** In motor drive systems, the D454Y-VB can be used to control the power requirements of the motor. Its 55A continuous drain current supports high current applications, and its low on-resistance reduces heat generation during motor operation.
3. **Charger and Battery Management:**
- **Example:** In charger and battery management systems, the D454Y-VB can be used for current switching and protection circuits. Its high current carrying capability and low RDS(ON) ensure efficient energy transfer and protection.
4. **Automotive Electronics:**
- **Example:** In automotive electronic systems, such as battery management systems and electric auxiliary systems, the D454Y-VB can be used as a high current switch to ensure reliable current control and thermal management to adapt to the harsh environment of automotive operation.
The D454Y-VB MOSFET is suitable for use in applications requiring high efficiency and excellent thermal management through its high current capability and low on-resistance, providing stable and reliable performance.
The D454Y-VB MOSFET is suitable for a variety of applications in multiple fields, and the following are some examples:
1. **Power Management Modules:**
- **Example:** In DC-DC converters, the D454Y-VB can be used as a switching element to convert high current and medium voltage power. Its low RDS(ON) and high current capability enable it to effectively reduce energy loss and improve conversion efficiency.
2. **Motor Drive:**
- **Example:** In motor drive systems, the D454Y-VB can be used to control the power requirements of the motor. Its 55A continuous drain current supports high current applications, and its low on-resistance reduces heat generation during motor operation.
3. **Charger and Battery Management:**
- **Example:** In charger and battery management systems, the D454Y-VB can be used for current switching and protection circuits. Its high current carrying capability and low RDS(ON) ensure efficient energy transfer and protection.
4. **Automotive Electronics:**
- **Example:** In automotive electronic systems, such as battery management systems and electric auxiliary systems, the D454Y-VB can be used as a high current switch to ensure reliable current control and thermal management to adapt to the harsh environment of automotive operation.
The D454Y-VB MOSFET is suitable for use in applications requiring high efficiency and excellent thermal management through its high current capability and low on-resistance, providing stable and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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