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D4504-VB Product details
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D4504-VB MOSFET Product Introduction
The D4504-VB is a high voltage N-Channel MOSFET packaged in a TO252 package, designed for applications that require high withstand voltage and reliable performance. Its maximum drain-source voltage (VDS) is 200V, suitable for high voltage scenarios. The gate-source voltage (VGS) range is ±20V, providing good switching control flexibility. The threshold voltage (Vth) of the D4504-VB is 3V, allowing it to start conducting at a higher gate voltage. The device has an on-resistance (RDS(ON)) of 245mΩ, measured at VGS=10V, ensuring low conduction losses. Its continuous drain current (ID) is 10A, capable of handling medium current applications. Using Trench technology, the D4504-VB provides excellent electrical performance and heat dissipation capabilities.
The D4504-VB is a high voltage N-Channel MOSFET packaged in a TO252 package, designed for applications that require high withstand voltage and reliable performance. Its maximum drain-source voltage (VDS) is 200V, suitable for high voltage scenarios. The gate-source voltage (VGS) range is ±20V, providing good switching control flexibility. The threshold voltage (Vth) of the D4504-VB is 3V, allowing it to start conducting at a higher gate voltage. The device has an on-resistance (RDS(ON)) of 245mΩ, measured at VGS=10V, ensuring low conduction losses. Its continuous drain current (ID) is 10A, capable of handling medium current applications. Using Trench technology, the D4504-VB provides excellent electrical performance and heat dissipation capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Compact surface mount package designed for good heat dissipation.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration suitable for switching and amplification applications.
3. **Drain-Source Voltage (VDS):** 200V
- **Description:** The maximum voltage that can be applied between the drain and source.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source.
5. **Threshold Voltage (Vth):** 3V
- **Description:** The gate-source voltage at which the MOSFET starts to turn on.
6. **On-resistance (RDS(ON)):** 245mΩ @ VGS=10V
- **Description:** The resistance between drain and source when VGS is 10V.
7. **Continuous drain current (ID):** 10A
- **Description:** The maximum continuous current that the device can conduct.
8. **Technology:** Trench
- **Description:** Technology that reduces on-resistance and improves efficiency.
1. **Package:** TO252
- **Description:** Compact surface mount package designed for good heat dissipation.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration suitable for switching and amplification applications.
3. **Drain-Source Voltage (VDS):** 200V
- **Description:** The maximum voltage that can be applied between the drain and source.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source.
5. **Threshold Voltage (Vth):** 3V
- **Description:** The gate-source voltage at which the MOSFET starts to turn on.
6. **On-resistance (RDS(ON)):** 245mΩ @ VGS=10V
- **Description:** The resistance between drain and source when VGS is 10V.
7. **Continuous drain current (ID):** 10A
- **Description:** The maximum continuous current that the device can conduct.
8. **Technology:** Trench
- **Description:** Technology that reduces on-resistance and improves efficiency.
Domain and module applications：
Application Examples
The D4504-VB MOSFET is suitable for different applications in a variety of fields, here are some examples:
1. **High Voltage Power Management:**
- **Example:** In high voltage DC-DC converters, the D4504-VB can be used for switching on the high voltage side. Its 200V VDS and low RDS(ON) make it suitable for applications that handle high voltage and medium current, providing good efficiency and stability.
2. **Power Converters:**
- **Example:** In power converters, such as inverters or power adapters, the D4504-VB can be used as the main switching element to help manage and convert high voltage power. Its Trench technology ensures low conduction losses, improving overall conversion efficiency.
3. **Motor Drive:**
- **Example:** In high voltage motor drive systems, the D4504-VB can be used for switch control to manage the power requirements of the motor. Its 10A continuous drain current can meet the current requirements of the motor under different operating conditions.
4. **Industrial Power Control:**
- **Example:** In industrial power control modules, the D4504-VB can be used for power protection and switch control applications, especially those that need to handle high voltage and medium current. Its high voltage withstand capability and stable electrical performance are suitable for various industrial power systems.
With its high voltage withstand capability and good conduction characteristics, the D4504-VB MOSFET is suitable for various applications requiring high voltage and medium current, ensuring reliability and efficiency.
The D4504-VB MOSFET is suitable for different applications in a variety of fields, here are some examples:
1. **High Voltage Power Management:**
- **Example:** In high voltage DC-DC converters, the D4504-VB can be used for switching on the high voltage side. Its 200V VDS and low RDS(ON) make it suitable for applications that handle high voltage and medium current, providing good efficiency and stability.
2. **Power Converters:**
- **Example:** In power converters, such as inverters or power adapters, the D4504-VB can be used as the main switching element to help manage and convert high voltage power. Its Trench technology ensures low conduction losses, improving overall conversion efficiency.
3. **Motor Drive:**
- **Example:** In high voltage motor drive systems, the D4504-VB can be used for switch control to manage the power requirements of the motor. Its 10A continuous drain current can meet the current requirements of the motor under different operating conditions.
4. **Industrial Power Control:**
- **Example:** In industrial power control modules, the D4504-VB can be used for power protection and switch control applications, especially those that need to handle high voltage and medium current. Its high voltage withstand capability and stable electrical performance are suitable for various industrial power systems.
With its high voltage withstand capability and good conduction characteristics, the D4504-VB MOSFET is suitable for various applications requiring high voltage and medium current, ensuring reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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