中文
English
D424-VB Product details
Back to previous pageProduct introduction：
D424-VB MOSFET Product Introduction
The D424-VB is a high-performance N-Channel MOSFET designed for applications requiring low voltage and high current capabilities. The device is packaged in a TO252 package, providing excellent thermal performance and reliability, making it ideal for demanding environments. Its maximum drain-source voltage (VDS) is 20V and its gate-source voltage (VGS) is ±20V, optimizing switching operation with a low threshold voltage (Vth) range of 0.5V to 1.5V. Its on-resistance (RDS(ON)) is 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, allowing efficient conduction and minimizing power losses. It has a continuous drain current (ID) of 100A, making it an ideal choice for high current applications where efficiency and thermal management are critical.
The D424-VB is a high-performance N-Channel MOSFET designed for applications requiring low voltage and high current capabilities. The device is packaged in a TO252 package, providing excellent thermal performance and reliability, making it ideal for demanding environments. Its maximum drain-source voltage (VDS) is 20V and its gate-source voltage (VGS) is ±20V, optimizing switching operation with a low threshold voltage (Vth) range of 0.5V to 1.5V. Its on-resistance (RDS(ON)) is 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, allowing efficient conduction and minimizing power losses. It has a continuous drain current (ID) of 100A, making it an ideal choice for high current applications where efficiency and thermal management are critical.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO252
- **Description:** Compact surface mount package designed for excellent heat dissipation.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for switching and amplification.
3. **Drain-Source Voltage (VDS):** 20V
- **Description:** The maximum voltage that can be applied between the drain and source.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source.
5. **Threshold Voltage (Vth):** 0.5V to 1.5V
- **Description:** The gate-source voltage at which the MOSFET starts to conduct.
6. **On-resistance (RDS(ON)):**
- **6mΩ @ VGS=2.5V:** The resistance between the drain and the source when VGS is 2.5V.
- **4.5mΩ @ VGS=4.5V:** The resistance between the drain and the source when VGS is 4.5V.
7. **Continuous drain current (ID):** 100A
- **Description:** The maximum continuous current that the device can conduct.
8. **Technology:** Trench
- **Description:** Technology that reduces on-resistance and improves efficiency.
1. **Package:** TO252
- **Description:** Compact surface mount package designed for excellent heat dissipation.
2. **Configuration:** Single N-Channel
- **Description:** Single N-Channel configuration, suitable for switching and amplification.
3. **Drain-Source Voltage (VDS):** 20V
- **Description:** The maximum voltage that can be applied between the drain and source.
4. **Gate-Source Voltage (VGS):** ±20V
- **Description:** The maximum voltage that can be applied between the gate and source.
5. **Threshold Voltage (Vth):** 0.5V to 1.5V
- **Description:** The gate-source voltage at which the MOSFET starts to conduct.
6. **On-resistance (RDS(ON)):**
- **6mΩ @ VGS=2.5V:** The resistance between the drain and the source when VGS is 2.5V.
- **4.5mΩ @ VGS=4.5V:** The resistance between the drain and the source when VGS is 4.5V.
7. **Continuous drain current (ID):** 100A
- **Description:** The maximum continuous current that the device can conduct.
8. **Technology:** Trench
- **Description:** Technology that reduces on-resistance and improves efficiency.
Domain and module applications：
Application Examples
D424-VB MOSFET is suitable for various applications in multiple fields:
1. **Power Modules:**
- **Example:** In DC-DC converters, D424-VB can be used as a synchronous rectifier or the primary side of the converter. Its low RDS(ON) and high current capability can reduce conduction losses, thereby improving overall efficiency.
2. **Motor Control:**
- **Example:** In motor controllers, especially in automotive applications, D424-VB can be used to switch high currents to meet the high demands of motor starting and running, and its Trench technology ensures the ability to handle high demands.
3. **Battery Protection Circuits:**
- **Example:** In battery management systems (BMS) of electric vehicles or portable electronic devices, D424-VB can be used as a switch to prevent overcurrent conditions, thanks to its high ID and low RDS(ON).
4. **Consumer Electronics:**
- **Example:** In devices such as laptops and smartphones, the D424-VB can be used in power management ICs to ensure efficient power delivery, extend battery life and improve device performance.
The D424-VB MOSFET's combination of low voltage, high current capability and low on-resistance makes it an ideal choice for applications where efficiency and thermal management are critical.
D424-VB MOSFET is suitable for various applications in multiple fields:
1. **Power Modules:**
- **Example:** In DC-DC converters, D424-VB can be used as a synchronous rectifier or the primary side of the converter. Its low RDS(ON) and high current capability can reduce conduction losses, thereby improving overall efficiency.
2. **Motor Control:**
- **Example:** In motor controllers, especially in automotive applications, D424-VB can be used to switch high currents to meet the high demands of motor starting and running, and its Trench technology ensures the ability to handle high demands.
3. **Battery Protection Circuits:**
- **Example:** In battery management systems (BMS) of electric vehicles or portable electronic devices, D424-VB can be used as a switch to prevent overcurrent conditions, thanks to its high ID and low RDS(ON).
4. **Consumer Electronics:**
- **Example:** In devices such as laptops and smartphones, the D424-VB can be used in power management ICs to ensure efficient power delivery, extend battery life and improve device performance.
The D424-VB MOSFET's combination of low voltage, high current capability and low on-resistance makes it an ideal choice for applications where efficiency and thermal management are critical.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
