D4180-VB Product details
Product introduction:
D4180-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current, low on-resistance applications. The device utilizes advanced Trench technology to achieve excellent switching efficiency and reliability. Its drain-source breakdown voltage (VDS) is 80V, suitable for medium and high voltage applications. The MOSFET has a gate-source voltage (VGS) of ±20V, a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 5mΩ at VGS=10V, and a maximum drain current (ID) of 75A, suitable for high current and high efficiency power management and drive applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter | Description |
|---------------------|----------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source breakdown voltage (VDS)** | 80V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 5mΩ @ VGS=10V |
| **Continuous drain current (ID)** | 75A |
| **Technology** | Trench |
Domain and module applications:
The high performance characteristics of D4180-VB make it widely used in the following fields and modules:
1. **Power management**:
- The low on-resistance and high current capability of D4180-VB make it an ideal power switch component. It is suitable for DC-DC converter and power switch applications, effectively improving energy conversion efficiency and reducing power consumption.
2. **Electric vehicle (EV) drive system**:
- Due to its high current carrying capacity and low on-resistance, D4180-VB is suitable for the drive system of electric vehicles. It can handle high current loads, improve the efficiency of electric vehicle power systems, reduce energy losses, and increase driving range.
3. **Industrial automation**:
- In industrial automation equipment, D4180-VB provides efficient power switch control for high power and high current applications. Its low RDS(ON) characteristics help improve equipment reliability and operating efficiency.
4. **Power Tools and Home Appliances**:
- For power tools and home appliances, the D4180-VB is able to provide efficient switching control and support stable operation of high current loads. The low RDS(ON) characteristics help reduce power consumption and improve the performance and service life of the equipment.
5. **Communication Equipment**:
- In communication equipment, the high current capability and low on-resistance of the D4180-VB help optimize the power switch performance, ensure the stability of communication equipment under high power operation, and meet power management needs.
6. **Renewable Energy Systems**:
- In solar and wind energy systems, the D4180-VB can be used as a key switching element in the inverter or converter to improve energy conversion efficiency and reduce system losses.
In short, the D4180-VB is a MOSFET suitable for high current, low power consumption applications, providing efficient and reliable switching solutions in power management, electric vehicle drive systems, industrial automation, power tools, communication equipment, and renewable energy systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image