D414-VB Product details
Product introduction:
**D414-VB** is a high-performance single N-channel MOSFET in TO252 package, designed to handle high current and low on-resistance applications. It utilizes advanced Trench technology to provide excellent efficiency and reliability. The drain-source breakdown voltage (VDS) of this MOSFET is 30V, suitable for medium and low voltage applications. Its maximum gate-source voltage (VGS) is ±20V, which ensures stable operation under different control voltages. The gate threshold voltage (Vth) is 1.7V, allowing it to operate efficiently at lower gate voltages. The on-resistance (RDS(ON)) is 2mΩ at VGS of 10V and 3mΩ at VGS of 4.5V, showing extremely low power consumption characteristics. The maximum drain current (ID) is 100A, suitable for applications with high current requirements.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** |
|-------------------------------|---------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source breakdown voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Gate threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))@VGS=10V** | 2mΩ |
| **On-resistance (RDS(ON))@VGS=4.5V** | 3mΩ |
| **Maximum drain current (ID)** | 100A |
| **Technology** | Trench |
Domain and module applications:
**D414-VB** MOSFET is suitable for multiple fields and modules, including:
1. **Power conversion and management**:
The low on-resistance and high current capability of D414-VB make it very suitable for power converters and power management modules. It can be applied to DC-DC converters to ensure efficient power conversion and low losses, suitable for computer power supplies, servers and high-performance electronic devices.
2. **Motor drive and control**:
In motor drive applications, the high drain current and low on-resistance characteristics of D414-VB make it an ideal choice for drive circuits. It can efficiently control high current loads and is suitable for motor control systems in electric vehicles, power tools and industrial automation equipment.
3. **Switching circuits**:
D414-VB is very suitable for various switching circuits, including switching power supplies, inverters and switching control modules. Its low on-resistance and high current handling capability ensure efficient switching operation, reduce power loss during switching, and are suitable for power switching and load switching applications.
4. **Power Amplifier**:
In power amplifier circuits, D414-VB can be used for amplification and switch control of high-power signals. Its low on-resistance and high current handling capability make it suitable for audio power amplifiers, RF power amplifiers, and other power amplifier applications that require high efficiency.
The high current carrying capacity, low on-resistance, and advanced Trench technology of D414-VB make it excel in high-power, high-efficiency electronic devices, significantly improving system performance and stability.
Technical support:
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