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D4100-VB Product details
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1. Product Introduction
D4100-VB is a high-performance N-channel MOSFET in TO252 package. It adopts advanced Trench technology and is designed to provide extremely low on-resistance and superior switching performance for high current applications. The drain-source breakdown voltage (VDS) of this MOSFET is 30V, and the maximum gate-source voltage (VGS) is ±20V. Its gate threshold voltage (Vth) is 1.7V, ensuring that it can be effectively turned on at a lower gate voltage. The on-resistance (RDS(ON)) of D4100-VB is 5mΩ when VGS is 10V and 6mΩ when VGS is 4.5V, showing its extremely low power loss characteristics. The maximum drain current (ID) is 80A, making it excellent in high current applications.
D4100-VB is a high-performance N-channel MOSFET in TO252 package. It adopts advanced Trench technology and is designed to provide extremely low on-resistance and superior switching performance for high current applications. The drain-source breakdown voltage (VDS) of this MOSFET is 30V, and the maximum gate-source voltage (VGS) is ±20V. Its gate threshold voltage (Vth) is 1.7V, ensuring that it can be effectively turned on at a lower gate voltage. The on-resistance (RDS(ON)) of D4100-VB is 5mΩ when VGS is 10V and 6mΩ when VGS is 4.5V, showing its extremely low power loss characteristics. The maximum drain current (ID) is 80A, making it excellent in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** |
|-------------------------------|---------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source breakdown voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Gate threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))@VGS=10V** | 5mΩ |
| **On-resistance (RDS(ON))@VGS=4.5V** | 6mΩ |
| **Maximum drain current (ID)** | 80A |
| **Technology** | Trench |
| **Parameter** | **Value** |
|-------------------------------|---------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source breakdown voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Gate threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))@VGS=10V** | 5mΩ |
| **On-resistance (RDS(ON))@VGS=4.5V** | 6mΩ |
| **Maximum drain current (ID)** | 80A |
| **Technology** | Trench |
Domain and module applications：
III. Application fields and module examples
**D4100-VB** MOSFET performs well in the following fields and modules:
1. **Power management**:
In power management systems, D4100-VB can be used in DC-DC converters and power modules to provide high-efficiency power conversion. Its low RDS(ON) value effectively reduces power consumption in the switching state, making the power supply design more efficient and reliable, and is suitable for power management modules in computer power supplies, consumer electronics, and communication equipment.
2. **Motor drive**:
In motor drive applications, the high drain current capability and low on-resistance of D4100-VB make it an ideal choice for driving electric motors. It is capable of handling high current loads in electric vehicles, power tools, and household appliances, providing stable switching control and efficient current management.
3. **Switching circuit**:
This MOSFET is suitable for various switching circuits, such as switching power supplies and inverters. Its high current capability and low on-resistance ensure efficient switching operation and reduce power loss during the switching process, making it suitable for switching circuits that require high performance and long life.
4. **Power Amplifier**:
In the power amplifier circuit, D4100-VB can be used for signal amplification and switching control of the power amplifier. Its low on-resistance and high current carrying capacity make it suitable for processing high-power signals, improving the performance and stability of the system, and is suitable for applications such as audio amplifiers and RF power amplifiers.
The high current capability, low on-resistance and advanced Trench technology of D4100-VB make it perform well in various high-power electronic devices, which can improve the efficiency and reliability of the system.
**D4100-VB** MOSFET performs well in the following fields and modules:
1. **Power management**:
In power management systems, D4100-VB can be used in DC-DC converters and power modules to provide high-efficiency power conversion. Its low RDS(ON) value effectively reduces power consumption in the switching state, making the power supply design more efficient and reliable, and is suitable for power management modules in computer power supplies, consumer electronics, and communication equipment.
2. **Motor drive**:
In motor drive applications, the high drain current capability and low on-resistance of D4100-VB make it an ideal choice for driving electric motors. It is capable of handling high current loads in electric vehicles, power tools, and household appliances, providing stable switching control and efficient current management.
3. **Switching circuit**:
This MOSFET is suitable for various switching circuits, such as switching power supplies and inverters. Its high current capability and low on-resistance ensure efficient switching operation and reduce power loss during the switching process, making it suitable for switching circuits that require high performance and long life.
4. **Power Amplifier**:
In the power amplifier circuit, D4100-VB can be used for signal amplification and switching control of the power amplifier. Its low on-resistance and high current carrying capacity make it suitable for processing high-power signals, improving the performance and stability of the system, and is suitable for applications such as audio amplifiers and RF power amplifiers.
The high current capability, low on-resistance and advanced Trench technology of D4100-VB make it perform well in various high-power electronic devices, which can improve the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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