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D408-VB Product details
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Product Introduction
The D408-VB is a high-performance N-channel MOSFET packaged in TO252. The device uses Trench technology and is designed for high current and high-efficiency applications. Its maximum drain-source voltage (VDS) is 30V and it can handle drain currents (ID) up to 70A. The D408-VB has a low on-resistance (RDS(ON)) and performs well at different gate-source voltages, ensuring efficient power management and low-power operation. With a threshold voltage (Vth) of 1.7V, it is suitable for a variety of electronic devices and power management systems that require high current carrying capacity.
The D408-VB is a high-performance N-channel MOSFET packaged in TO252. The device uses Trench technology and is designed for high current and high-efficiency applications. Its maximum drain-source voltage (VDS) is 30V and it can handle drain currents (ID) up to 70A. The D408-VB has a low on-resistance (RDS(ON)) and performs well at different gate-source voltages, ensuring efficient power management and low-power operation. With a threshold voltage (Vth) of 1.7V, it is suitable for a variety of electronic devices and power management systems that require high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management system**:
- **High power switch**: With its low on-resistance and high current capability, the D408-VB is ideally suited for switch applications in high power power management systems. This can effectively reduce switching losses and improve power efficiency.
2. **Electric Vehicles (EV)**:
- **Motor Drive**: In the motor drive system of an electric vehicle, the D408-VB can be used as a high current switch component to handle the high load demands of the motor while providing reliable current control and low power operation.
3. **DC-DC Converter**:
- **High Efficiency DC-DC Converter**: The D408-VB is suitable for high-efficiency DC-DC converters, providing low on-resistance to reduce conversion losses, thereby improving the power conversion efficiency of the entire system.
4. **LED lighting**:
- **LED drive circuit**: In LED lighting systems, the D408-VB can be used as a switching element in the drive circuit to handle high current demands and ensure high efficiency and long life.
5. **Power management chip**:
- **Power management chip switch**: This MOSFET can be used as a switching element in the power management chip to support high current loads and improve the overall stability and efficiency of the system.
With its low on-resistance and high current handling capability, the D408-VB is very suitable for applications in power management, electric vehicle drives, DC-DC conversion, LED lighting and power management chips, providing high efficiency and reliability.
1. **Power management system**:
- **High power switch**: With its low on-resistance and high current capability, the D408-VB is ideally suited for switch applications in high power power management systems. This can effectively reduce switching losses and improve power efficiency.
2. **Electric Vehicles (EV)**:
- **Motor Drive**: In the motor drive system of an electric vehicle, the D408-VB can be used as a high current switch component to handle the high load demands of the motor while providing reliable current control and low power operation.
3. **DC-DC Converter**:
- **High Efficiency DC-DC Converter**: The D408-VB is suitable for high-efficiency DC-DC converters, providing low on-resistance to reduce conversion losses, thereby improving the power conversion efficiency of the entire system.
4. **LED lighting**:
- **LED drive circuit**: In LED lighting systems, the D408-VB can be used as a switching element in the drive circuit to handle high current demands and ensure high efficiency and long life.
5. **Power management chip**:
- **Power management chip switch**: This MOSFET can be used as a switching element in the power management chip to support high current loads and improve the overall stability and efficiency of the system.
With its low on-resistance and high current handling capability, the D408-VB is very suitable for applications in power management, electric vehicle drives, DC-DC conversion, LED lighting and power management chips, providing high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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