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D406-VB Product details

Product introduction:

1. D406-VB Product Introduction



D406-VB is a high-performance single N-channel MOSFET in TO252 package. It uses Trench technology, which provides extremely low on-resistance and high current handling capability. D406-VB has a drain-source breakdown voltage (VDS) of 30V and can operate stably within a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is as low as 2mΩ at VGS=10V, capable of handling continuous drain currents (ID) of up to 100A. This feature makes D406-VB particularly suitable for high-current, high-efficiency switching applications such as power management and high-power power modules.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 100A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. D406-VB Detailed parameter description



| Parameter | Description |

|------|------|

| **Package** | TO252 |

| **Configuration** | Single N-channel|

| **Drain-source breakdown voltage (VDS)** | 30V |

| **Gate-source voltage (VGS)** | ±20V |

| **Threshold voltage (Vth)** | 1.7V |

| **On-resistance (RDS(ON))** | 3mΩ @ VGS=4.5V |

| **On-resistance (RDS(ON))** | 2mΩ @ VGS=10V |

| **Continuous drain current (ID)** | 100A |

| **Technology** | Trench |



Domain and module applications:

III. Application fields and modules of D406-VB



The high current carrying capacity and extremely low on-resistance of D406-VB give it significant advantages in multiple fields and modules:



1. **Power management system**:

- In the power management module, D406-VB can be used as an efficient switching element for switching and regulating power. Its low on-resistance and high current handling capability can significantly improve system efficiency and reduce power consumption and heat.



2. **Electric vehicle (EV) drive system**:

- In the drive system of electric vehicles, the high current carrying capacity and low on-resistance of D406-VB make it very suitable for motor control switching. It can effectively handle the high current load of electric vehicle motors and improve the performance and endurance of electric vehicles.



3. **DC-DC converter**:

- As a switching element in DC-DC converters, D406-VB can significantly improve conversion efficiency. Due to its low on-resistance, the converter is more efficient and suitable for high current output applications such as computer power supplies and communication equipment.



4. **High Power Load Switch**:

- This MOSFET can be used in high power load switching applications. Its high current capability and low on-resistance enable it to handle large current loads while keeping energy losses low, which is critical for protecting circuits from overload damage.



5. **Power Amplifier**:

- In power amplifier applications, the high current handling capability and low on-resistance of the D406-VB can provide stable power switching operation, ensuring reliable performance in high power environments. This makes it suitable for applications such as audio amplifiers and RF amplifiers.



Overall, the superior performance of the D406-VB makes it outstanding in power management, electric vehicle drive systems, DC-DC converters, high power load switches, and power amplifiers, providing efficient and reliable solutions for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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