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D404-VB Product details
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1. Product Introduction
D404-VB is a high-performance single N-channel MOSFET packaged in TO252, using advanced Trench technology. This MOSFET has a drain-source breakdown voltage (VDS) of 30V and a maximum gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 1.7V, providing excellent switching performance. The on-resistance (RDS(ON)) is 2mΩ when VGS is 10V and 3mΩ when VGS is 4.5V, showing its extremely low on-resistance. This makes the D404-VB have extremely low power loss in high current applications. The maximum drain current (ID) is 100A, which is suitable for a variety of high-power, high-efficiency electronic devices.
D404-VB is a high-performance single N-channel MOSFET packaged in TO252, using advanced Trench technology. This MOSFET has a drain-source breakdown voltage (VDS) of 30V and a maximum gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is 1.7V, providing excellent switching performance. The on-resistance (RDS(ON)) is 2mΩ when VGS is 10V and 3mΩ when VGS is 4.5V, showing its extremely low on-resistance. This makes the D404-VB have extremely low power loss in high current applications. The maximum drain current (ID) is 100A, which is suitable for a variety of high-power, high-efficiency electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** |
|-------------------------------|---------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source breakdown voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Gate threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))@VGS=10V** | 2mΩ |
| **On-resistance (RDS(ON))@VGS=4.5V** | 3mΩ |
| **Maximum drain current (ID)** | 100A |
| **Technology** | Trench |
| **Parameter** | **Value** |
|-------------------------------|---------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source breakdown voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Gate threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))@VGS=10V** | 2mΩ |
| **On-resistance (RDS(ON))@VGS=4.5V** | 3mΩ |
| **Maximum drain current (ID)** | 100A |
| **Technology** | Trench |
Domain and module applications：
III. Application Fields and Module Examples
**D404-VB** MOSFET has important applications in the following fields and modules:
1. **Power Management**: In high-efficiency power converters such as DC-DC converters and power modules, the low on-resistance and high current handling capability of D404-VB ensure high efficiency and stability. Especially in situations where power loss needs to be reduced and conversion efficiency needs to be improved, the performance of D404-VB is particularly outstanding.
2. **Motor Drive**: In motor control and drive applications, this MOSFET can withstand drain currents up to 100A and is suitable for high-current motor drive circuits. Its low RDS(ON) value reduces power loss and improves the working efficiency and dynamic response capability of the motor.
3. **Switching Circuit**: In various switching circuits such as switching power supplies and inverters, the high current carrying capacity and low on-resistance of D404-VB make it an ideal switching element. It can stably and efficiently perform high-current switching operations to ensure system reliability.
4. **Battery Management System**: In a battery management system, the D404-VB can be used as a switch in a protection circuit to regulate the battery charging and discharging process and prevent overcurrent and overvoltage conditions. This helps to improve battery life and system safety.
The high performance characteristics of the D404-VB enable it to provide stable and efficient current control in the above applications and is widely used in modern high-power electronic devices.
**D404-VB** MOSFET has important applications in the following fields and modules:
1. **Power Management**: In high-efficiency power converters such as DC-DC converters and power modules, the low on-resistance and high current handling capability of D404-VB ensure high efficiency and stability. Especially in situations where power loss needs to be reduced and conversion efficiency needs to be improved, the performance of D404-VB is particularly outstanding.
2. **Motor Drive**: In motor control and drive applications, this MOSFET can withstand drain currents up to 100A and is suitable for high-current motor drive circuits. Its low RDS(ON) value reduces power loss and improves the working efficiency and dynamic response capability of the motor.
3. **Switching Circuit**: In various switching circuits such as switching power supplies and inverters, the high current carrying capacity and low on-resistance of D404-VB make it an ideal switching element. It can stably and efficiently perform high-current switching operations to ensure system reliability.
4. **Battery Management System**: In a battery management system, the D404-VB can be used as a switch in a protection circuit to regulate the battery charging and discharging process and prevent overcurrent and overvoltage conditions. This helps to improve battery life and system safety.
The high performance characteristics of the D404-VB enable it to provide stable and efficient current control in the above applications and is widely used in modern high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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