D3NK80Z-VB TO252 Product details
Product introduction:
D3NK80Z-VB is a high-voltage single N-channel MOSFET packaged in TO252. The device is designed for high-voltage applications, and its maximum drain-source breakdown voltage (VDS) is 800V, which is suitable for switching operations in high-voltage environments. The maximum gate-source voltage (VGS) of D3NK80Z-VB is ±30V, and the threshold voltage (Vth) is 3.5V, ensuring that the device can still operate reliably under high voltage conditions. Its on-resistance is 2600mΩ at VGS=10V, and it can handle a current (ID) of 2A under high voltage. D3NK80Z-VB uses SJ_Multi-EPI technology, which helps to reduce leakage current while maintaining a high breakdown voltage, improving the stability and reliability of the device.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter| Description|
|------|------|
| Package| TO252 |
| Configuration| Single N-channel|
| Drain-source breakdown voltage (VDS) | 800V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2600mΩ @ VGS=10V |
| Continuous drain current (ID) | 2A |
| Technology| SJ_Multi-EPI |
Domain and module applications:
The high withstand voltage characteristics of D3NK80Z-VB MOSFET make it suitable for multiple fields and modules that need to handle high voltage:
1. **High voltage power switch**:
- D3NK80Z-VB is suitable for high voltage power switching applications, such as switching circuits of industrial power supplies and high power transformers. Its high drain-source breakdown voltage can handle high voltage loads, ensuring stability and reliability in power switching operations.
2. **Power inverter**:
- In power inverters, D3NK80Z-VB can be used as a switching element on the high voltage side. Its high breakdown voltage and high on-resistance are suitable for applications that convert DC to AC, especially in systems that require high voltage conversion.
3. **High voltage power regulation**:
- This MOSFET is suitable for high voltage power regulation systems, such as power regulation modules and power adapters. Its stable electrical characteristics can effectively control and regulate power flow under high voltage and improve system efficiency.
4. **Motor drive control**:
- In high voltage motor drive applications, D3NK80Z-VB can be used as part of the switch control circuit for starting and speed regulation of high voltage motors. Its high voltage tolerance ensures reliable operation in motor drive systems.
5. **High voltage protection circuit**:
- D3NK80Z-VB can also be used in high voltage protection circuits such as overvoltage protection and high voltage circuit breakers. Its high voltage tolerance can effectively protect the circuit from high voltage shock and improve the safety of the system.
In summary, the high voltage tolerance and stable performance of D3NK80Z-VB make it have a wide range of application prospects in the fields of high voltage power switches, power inverters, high voltage power regulation, motor drive control and high voltage protection circuits.
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