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D3N80-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
D3N80-VB is a high voltage tolerant N-channel MOSFET in TO252 package, manufactured using SJ_Multi-EPI technology. With a drain-source breakdown voltage (VDS) of up to 800V and a gate-source voltage (VGS) of ±30V, this MOSFET is suitable for applications that require high voltage and reliability. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 2600mΩ when VGS is 10V, and the maximum drain current (ID) is 2A. These features make the D3N80-VB ideal for high voltage switching and power management systems.
D3N80-VB is a high voltage tolerant N-channel MOSFET in TO252 package, manufactured using SJ_Multi-EPI technology. With a drain-source breakdown voltage (VDS) of up to 800V and a gate-source voltage (VGS) of ±30V, this MOSFET is suitable for applications that require high voltage and reliability. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 2600mΩ when VGS is 10V, and the maximum drain current (ID) is 2A. These features make the D3N80-VB ideal for high voltage switching and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** |
|-------------------------------|---------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source breakdown voltage (VDS)** | 800V |
| **Gate-source voltage (VGS)** | ±30V |
| **Gate threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))@VGS=10V** | 2600mΩ |
| **Maximum drain current (ID)** | 2A |
| **Technology** | SJ_Multi-EPI |
| **Parameter** | **Value** |
|-------------------------------|---------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source breakdown voltage (VDS)** | 800V |
| **Gate-source voltage (VGS)** | ±30V |
| **Gate threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))@VGS=10V** | 2600mΩ |
| **Maximum drain current (ID)** | 2A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power converter**
- **High-voltage DC-DC converter**: The 800V drain-source breakdown voltage of the D3N80-VB makes it suitable for switching applications in high-voltage DC-DC converters. This MOSFET can stably switch current under high voltage environments, improving the efficiency and reliability of power conversion.
2. **High-voltage switch control**
- **Power switch**: In high-voltage power systems, the D3N80-VB can be used as a power switch to control current flow and ensure stable operation under high voltage. This is especially important for power distribution and switch control systems.
3. **High-voltage protection circuit**
- **Overvoltage protection**: This MOSFET can be used in high-voltage protection circuits to prevent equipment from being damaged under high voltage conditions. It can effectively handle high-voltage switching requirements and protect circuits from overvoltage damage.
4. **Motor Drive**
- **High-voltage Motor Control**: In high-voltage motor drive systems, D3N80-VB can be used for switch control to ensure the stability of the motor under high-voltage operation. Suitable for motor controllers and high-power motor applications.
5. **High-voltage Battery Management System**
- **Battery Protection**: In high-voltage battery management systems, D3N80-VB can be used in battery protection circuits to provide high-voltage switching capabilities to ensure the safe use of batteries in high-voltage environments.
6. **Power Transmission and Distribution**
- **Power System**: This MOSFET is suitable for high-voltage switches and control modules in power transmission and distribution systems, which can stably manage power flow under high voltage conditions and improve system reliability and efficiency.
With its high voltage tolerance and stable switching characteristics, D3N80-VB is suitable for various high-voltage application scenarios, providing excellent performance and reliability.
1. **High-voltage power converter**
- **High-voltage DC-DC converter**: The 800V drain-source breakdown voltage of the D3N80-VB makes it suitable for switching applications in high-voltage DC-DC converters. This MOSFET can stably switch current under high voltage environments, improving the efficiency and reliability of power conversion.
2. **High-voltage switch control**
- **Power switch**: In high-voltage power systems, the D3N80-VB can be used as a power switch to control current flow and ensure stable operation under high voltage. This is especially important for power distribution and switch control systems.
3. **High-voltage protection circuit**
- **Overvoltage protection**: This MOSFET can be used in high-voltage protection circuits to prevent equipment from being damaged under high voltage conditions. It can effectively handle high-voltage switching requirements and protect circuits from overvoltage damage.
4. **Motor Drive**
- **High-voltage Motor Control**: In high-voltage motor drive systems, D3N80-VB can be used for switch control to ensure the stability of the motor under high-voltage operation. Suitable for motor controllers and high-power motor applications.
5. **High-voltage Battery Management System**
- **Battery Protection**: In high-voltage battery management systems, D3N80-VB can be used in battery protection circuits to provide high-voltage switching capabilities to ensure the safe use of batteries in high-voltage environments.
6. **Power Transmission and Distribution**
- **Power System**: This MOSFET is suitable for high-voltage switches and control modules in power transmission and distribution systems, which can stably manage power flow under high voltage conditions and improve system reliability and efficiency.
With its high voltage tolerance and stable switching characteristics, D3N80-VB is suitable for various high-voltage application scenarios, providing excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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