D2910-VB Product details
Product introduction:
The D2910-VB is a high-performance N-channel MOSFET in a TO252 package, manufactured using Trench technology. This MOSFET has a drain-source breakdown voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, making it suitable for applications that require high voltage tolerance. Its gate threshold voltage (Vth) is 1.8V, while at a VGS of 10V, the on-resistance (RDS(ON)) is 18mΩ and the maximum drain current (ID) is 45A. This configuration provides high current handling capability and low power consumption, making it suitable for a variety of high voltage and high current applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** |
|------------------------------|---------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source breakdown voltage (VDS)** | 100V |
| **Gate-source voltage (VGS)** | ±20V |
| **Gate threshold voltage (Vth)** | 1.8V |
| **On-resistance (RDS(ON))@VGS=10V** | 18mΩ |
| **Maximum drain current (ID)** | 45A |
| **Technology** | Trench |
Domain and module applications:
1. **Power management**
- **High voltage DC-DC converter**: The high drain-source breakdown voltage and low on-resistance characteristics of the D2910-VB make it very suitable for high voltage DC-DC converter applications. It can provide stable voltage conversion and reduce power loss in power management systems, and is suitable for industrial power supplies and communication equipment.
2. **Motor drive**
- **High voltage motor control**: In motor drive circuits, the D2910-VB can handle high voltage and high current, and is suitable for high power motor drive applications such as electric vehicles, motor controllers, and industrial automation equipment.
3. **Power switch**
- **High voltage switch control**: The high voltage tolerance of this MOSFET makes it suitable for high voltage load switches, such as power switch modules, power switches in home appliances, etc., providing reliable switching control and current handling capabilities.
4. **Battery Management System**
- **Battery Protection Circuit**: D2910-VB is used in the battery management system for the protection circuit of high-voltage batteries, which can effectively manage the battery charging and discharging process and protect the battery from overvoltage and overcurrent damage.
5. **LED Driver**
- **High Power LED Driver**: In the LED driver module, this MOSFET provides efficient switching control, which is suitable for commercial and industrial lighting systems, ensuring that LED lamps operate stably under high current conditions and optimizing energy efficiency.
6. **UPS System**
- **Uninterruptible Power System**: D2910-VB is used for high-voltage power supply switching control in UPS systems, which can provide reliable power supply and protect the normal operation of critical equipment and data centers during power outages.
With its high voltage and high current handling capabilities, D2910-VB provides excellent performance and reliability in a variety of applications that require efficient switching and current management.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image