D1NK80Z-VB TO252 Product details
Product introduction:
**D1NK80Z-VB** is a high voltage single N-channel MOSFET in TO252 package and uses SJ_Multi-EPI technology. It has a drain-source voltage (VDS) of up to 800V, suitable for applications that require high voltage tolerance. The gate drive voltage (VGS) range of D1NK80Z-VB is ±30V, and the threshold voltage (Vth) is 3.5V. Although its on-resistance (RDS(ON)) is high at 2600mΩ at VGS=10V, it can handle a continuous drain current (ID) of up to 2A, making it suitable for high voltage and low current applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter name** | **Parameter value** |
|------------------------|------------------------------|
| **Package type** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 800V |
| **Gate drive voltage (VGS)** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS=10V |
| **Continuous drain current (ID)** | 2A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications:
**D1NK80Z-VB** MOSFET's high voltage capability and moderate current carrying capacity enable it to excel in the following fields and modules:
1. **Power Protection Circuit**
- In the power protection circuit, D1NK80Z-VB can be used as an overvoltage protection element. Its high drain-source voltage can effectively protect the power system from high voltage spikes and ensure the safe operation of the system under overvoltage conditions.
2. **High Voltage Switch**
- This MOSFET is suitable for high voltage switching applications such as power switching and high voltage load switching. Although the on-resistance is high, its current handling capability is still sufficient to cope with the switching requirements of low current loads in high voltage applications.
3. **Inverter**
- In the inverter, D1NK80Z-VB can be used as a switching element on the high voltage side, especially in applications that require high voltage tolerance. Its high voltage tolerance enables it to handle the conversion between high voltage input and output.
4. **Industrial Power**
- In industrial power systems, the high voltage and withstand capability of this MOSFET makes it suitable for power management of various industrial equipment. It can handle the high voltage conditions that may occur in industrial equipment and ensure stable operation of the equipment.
5. **Power Tools**
- For power tools that require high voltage, the D1NK80Z-VB provides a reliable switching solution. In this application, its high voltage capability can handle the high voltage power supply in the tool and provide the necessary switching control.
6. **Lighting Control**
- In high voltage lighting control systems, the D1NK80Z-VB can be used as a high voltage switch. It can control the on and off state of high voltage lamps and meet the needs of high voltage lighting applications.
Although the D1NK80Z-VB has a high on-resistance, its high voltage carrying capability makes it perform well in handling high voltage applications.
Technical support:
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