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D150N3LLH6-VB Product details
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D150N3LLH6-VB Product Introduction
D150N3LLH6-VB is a high-performance N-channel power MOSFET in TO252 package, designed for medium voltage and high current applications. This MOSFET has a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 120A. Its on-resistance is 2mΩ at VGS=10V and 3mΩ at VGS=4.5V, with extremely low on-resistance and efficient energy transfer. Based on Trench technology, this MOSFET provides excellent switching performance and low power consumption characteristics, and is suitable for applications requiring high current and low conduction loss.
D150N3LLH6-VB is a high-performance N-channel power MOSFET in TO252 package, designed for medium voltage and high current applications. This MOSFET has a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 120A. Its on-resistance is 2mΩ at VGS=10V and 3mΩ at VGS=4.5V, with extremely low on-resistance and efficient energy transfer. Based on Trench technology, this MOSFET provides excellent switching performance and low power consumption characteristics, and is suitable for applications requiring high current and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: D150N3LLH6-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: D150N3LLH6-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The high current and low on-resistance characteristics of D150N3LLH6-VB enable it to excel in multiple fields and modules:
1. **Power management**:
- **DC-DC converter**: Due to its ultra-low on-resistance, this MOSFET is very suitable for use in DC-DC converters to improve conversion efficiency, reduce power consumption, and enhance system stability.
- **High-efficiency power switch**: In high-efficiency power switch applications, D150N3LLH6-VB can effectively control current flow, optimize power performance, and reduce energy loss.
2. **Consumer electronics**:
- **Battery management system**: In the battery management system, D150N3LLH6-VB is able to handle high currents, provide stable charge and discharge control, and ensure efficient and safe operation of the battery system.
- **High Power Electronic Devices**: Suitable for consumer electronic devices that require high current and low power consumption, such as game consoles and high-performance computers, improving the energy efficiency of the overall device through its low on-resistance.
3. **Industrial Applications**:
- **Motor Drive**: The D150N3LLH6-VB can effectively handle high current loads in motor drive modules, ensuring efficient operation of the motor through its low on-resistance and high switching speed.
- **Industrial Power Module**: In industrial power modules, the D150N3LLH6-VB can provide stable current control and efficient power transmission, supporting the stable and efficient operation of various industrial equipment.
These application areas demonstrate the importance and wide applicability of the D150N3LLH6-VB in high current and efficient energy management systems.
The high current and low on-resistance characteristics of D150N3LLH6-VB enable it to excel in multiple fields and modules:
1. **Power management**:
- **DC-DC converter**: Due to its ultra-low on-resistance, this MOSFET is very suitable for use in DC-DC converters to improve conversion efficiency, reduce power consumption, and enhance system stability.
- **High-efficiency power switch**: In high-efficiency power switch applications, D150N3LLH6-VB can effectively control current flow, optimize power performance, and reduce energy loss.
2. **Consumer electronics**:
- **Battery management system**: In the battery management system, D150N3LLH6-VB is able to handle high currents, provide stable charge and discharge control, and ensure efficient and safe operation of the battery system.
- **High Power Electronic Devices**: Suitable for consumer electronic devices that require high current and low power consumption, such as game consoles and high-performance computers, improving the energy efficiency of the overall device through its low on-resistance.
3. **Industrial Applications**:
- **Motor Drive**: The D150N3LLH6-VB can effectively handle high current loads in motor drive modules, ensuring efficient operation of the motor through its low on-resistance and high switching speed.
- **Industrial Power Module**: In industrial power modules, the D150N3LLH6-VB can provide stable current control and efficient power transmission, supporting the stable and efficient operation of various industrial equipment.
These application areas demonstrate the importance and wide applicability of the D150N3LLH6-VB in high current and efficient energy management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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