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D12NF06-VB TO252 Product details
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1. D12NF06-VB Product Introduction
D12NF06-VB is a high-performance single N-channel MOSFET in TO252 package. Its design is optimized for applications that require medium voltage and high current handling capabilities. It has a drain-source breakdown voltage of 60V and a continuous drain current capability of 18A. This MOSFET uses Trench technology to ensure its high efficiency at low on-resistance. At VGS = 4.5V, its on-resistance is 85mΩ, which is further reduced to 73mΩ at VGS = 10V. These characteristics make D12NF06-VB very suitable for application scenarios that require high efficiency, such as power switching and load driving.
D12NF06-VB is a high-performance single N-channel MOSFET in TO252 package. Its design is optimized for applications that require medium voltage and high current handling capabilities. It has a drain-source breakdown voltage of 60V and a continuous drain current capability of 18A. This MOSFET uses Trench technology to ensure its high efficiency at low on-resistance. At VGS = 4.5V, its on-resistance is 85mΩ, which is further reduced to 73mΩ at VGS = 10V. These characteristics make D12NF06-VB very suitable for application scenarios that require high efficiency, such as power switching and load driving.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. D12NF06-VB Detailed parameter description
| Parameter| Description|
|------|------|
| Package| TO252 |
| Configuration| Single N-channel|
| Drain-source breakdown voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 85mΩ @ VGS=4.5V
73mΩ @ VGS=10V |
| Continuous drain current (ID) | 18A |
| Technology| Trench |
| Parameter| Description|
|------|------|
| Package| TO252 |
| Configuration| Single N-channel|
| Drain-source breakdown voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 85mΩ @ VGS=4.5V
73mΩ @ VGS=10V |
| Continuous drain current (ID) | 18A |
| Technology| Trench |
Domain and module applications：
III. Application fields and modules of D12NF06-VB
The design features of D12NF06-VB MOSFET make it suitable for a variety of fields and modules:
1. **Power switch**: In power management systems, the high current capability and low on-resistance of D12NF06-VB make it an ideal choice for power switches. It can efficiently control the flow of current, reduce power consumption and heat generation, and improve the overall efficiency of the system.
2. **Motor drive**: In motor control modules, this MOSFET can handle high current and medium voltage, making it suitable for driving and controlling motors. Its low on-resistance helps reduce energy loss in the drive system and improve the efficiency of the motor.
3. **Battery management**: In battery management systems, D12NF06-VB can be used as a load switch or battery protection switch, capable of withstanding high current loads and providing reliable performance to ensure safe and efficient operation of the battery system.
4. **LED driver**: When used in LED driver circuits, the low on-resistance and high current handling capability of this MOSFET can effectively control the current of the LED, improving the energy efficiency and stability of the LED lighting system.
5. **Automotive electronics**: In automotive electronic systems, the D12NF06-VB can handle high current loads and is suitable for automotive power switches and load control modules to ensure stable operation of automotive electronic systems in harsh environments.
In general, the D12NF06-VB MOSFET provides reliable performance and efficient power management solutions in a variety of applications due to its excellent current handling capability and low on-resistance.
The design features of D12NF06-VB MOSFET make it suitable for a variety of fields and modules:
1. **Power switch**: In power management systems, the high current capability and low on-resistance of D12NF06-VB make it an ideal choice for power switches. It can efficiently control the flow of current, reduce power consumption and heat generation, and improve the overall efficiency of the system.
2. **Motor drive**: In motor control modules, this MOSFET can handle high current and medium voltage, making it suitable for driving and controlling motors. Its low on-resistance helps reduce energy loss in the drive system and improve the efficiency of the motor.
3. **Battery management**: In battery management systems, D12NF06-VB can be used as a load switch or battery protection switch, capable of withstanding high current loads and providing reliable performance to ensure safe and efficient operation of the battery system.
4. **LED driver**: When used in LED driver circuits, the low on-resistance and high current handling capability of this MOSFET can effectively control the current of the LED, improving the energy efficiency and stability of the LED lighting system.
5. **Automotive electronics**: In automotive electronic systems, the D12NF06-VB can handle high current loads and is suitable for automotive power switches and load control modules to ensure stable operation of automotive electronic systems in harsh environments.
In general, the D12NF06-VB MOSFET provides reliable performance and efficient power management solutions in a variety of applications due to its excellent current handling capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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