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D11NM60N-VB TO252 Product details
Back to previous pageProduct introduction：
1. Product Introduction
D11NM60N-VB is a high voltage N-channel MOSFET packaged in TO252. Using advanced SJ_Multi-EPI technology, this MOSFET has a breakdown voltage (VDS) of 650V and a gate voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Its drain-source on-resistance (RDS(ON)) is 500mΩ at VGS of 10V, and the maximum drain current (ID) reaches 9A. This design enables it to have excellent switching performance and thermal stability in high voltage applications, and is suitable for use in various power management and control systems.
D11NM60N-VB is a high voltage N-channel MOSFET packaged in TO252. Using advanced SJ_Multi-EPI technology, this MOSFET has a breakdown voltage (VDS) of 650V and a gate voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. Its drain-source on-resistance (RDS(ON)) is 500mΩ at VGS of 10V, and the maximum drain current (ID) reaches 9A. This design enables it to have excellent switching performance and thermal stability in high voltage applications, and is suitable for use in various power management and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** |
|------------------------|---------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Breakdown voltage (VDS)** | 650V |
| **Gate voltage (VGS)** | ±30V |
| **Gate threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))@VGS=10V** | 500mΩ |
| **Maximum drain current (ID)** | 9A |
| **Technology** | SJ_Multi-EPI process|
| **Parameter** | **Value** |
|------------------------|---------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Breakdown voltage (VDS)** | 650V |
| **Gate voltage (VGS)** | ±30V |
| **Gate threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))@VGS=10V** | 500mΩ |
| **Maximum drain current (ID)** | 9A |
| **Technology** | SJ_Multi-EPI process|
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power management**
- **Industrial power supply**: The high breakdown voltage of D11NM60N-VB makes it very suitable for use in industrial power supply systems. It can handle high-voltage power management tasks, improve system reliability and stability, and is widely used in power conversion modules and industrial equipment.
2. **Switching power supply**
- **Power switching module**: In the switching power supply module, D11NM60N-VB can be used as the main switching element. Its low on-resistance ensures high-efficiency power conversion and is suitable for various power adapters and power converters.
3. **Motor drive**
- **High-voltage motor control**: This MOSFET provides reliable switching control in motor drive applications, especially for motor drive systems that require high voltage and high current, such as power tools and industrial motor drives.
4. **Battery Management System**
- **High Voltage Battery Protection**: D11NM60N-VB can be used in high voltage battery management systems. With its high voltage resistance and stable switching performance, it can ensure the safe charging and discharging of the battery and the overall reliability of the system. It is suitable for electric vehicles and energy storage systems.
5. **Inverter**
- **Solar and Wind Inverter**: In solar and wind inverters, the high breakdown voltage and low on-resistance of D11NM60N-VB help improve the efficiency and stability of the inverter and ensure the reliability and efficiency of the energy conversion process.
6. **LED Lighting Control**
- **High Power LED Driver**: In LED lighting systems, this MOSFET can be used for switching control of high power LEDs. With its low on-resistance, it can effectively manage the power in the LED driver circuit and is widely used in commercial and industrial lighting systems.
D11NM60N-VB is suitable for various high voltage and high power applications with its high voltage tolerance and excellent switching performance, ensuring the efficiency and reliability of power management and power control systems.
1. **High-voltage power management**
- **Industrial power supply**: The high breakdown voltage of D11NM60N-VB makes it very suitable for use in industrial power supply systems. It can handle high-voltage power management tasks, improve system reliability and stability, and is widely used in power conversion modules and industrial equipment.
2. **Switching power supply**
- **Power switching module**: In the switching power supply module, D11NM60N-VB can be used as the main switching element. Its low on-resistance ensures high-efficiency power conversion and is suitable for various power adapters and power converters.
3. **Motor drive**
- **High-voltage motor control**: This MOSFET provides reliable switching control in motor drive applications, especially for motor drive systems that require high voltage and high current, such as power tools and industrial motor drives.
4. **Battery Management System**
- **High Voltage Battery Protection**: D11NM60N-VB can be used in high voltage battery management systems. With its high voltage resistance and stable switching performance, it can ensure the safe charging and discharging of the battery and the overall reliability of the system. It is suitable for electric vehicles and energy storage systems.
5. **Inverter**
- **Solar and Wind Inverter**: In solar and wind inverters, the high breakdown voltage and low on-resistance of D11NM60N-VB help improve the efficiency and stability of the inverter and ensure the reliability and efficiency of the energy conversion process.
6. **LED Lighting Control**
- **High Power LED Driver**: In LED lighting systems, this MOSFET can be used for switching control of high power LEDs. With its low on-resistance, it can effectively manage the power in the LED driver circuit and is widely used in commercial and industrial lighting systems.
D11NM60N-VB is suitable for various high voltage and high power applications with its high voltage tolerance and excellent switching performance, ensuring the efficiency and reliability of power management and power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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