D110NH02L-VB Product details
Product introduction:
The D110NH02L-VB is a high-performance N-channel MOSFET in a TO252 package. It is designed for high current and high switching efficiency applications, with extremely low on-resistance and high current handling capability. The maximum drain-source voltage (VDS) of this MOSFET is 20V, and the maximum gate-source voltage (VGS) is ±20V. Its gate threshold voltage (Vth) ranges from 0.5V to 1.5V, allowing it to operate effectively even at low gate drive voltages. The on-resistance of the D110NH02L-VB is 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, and the maximum drain current (ID) can reach 100A. These features make the D110NH02L-VB suitable for applications requiring high switching speeds and high current handling.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Maximum drain-source voltage (VDS)**: 20V
4. **Maximum gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
6. **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
7. **Maximum drain current (ID)**: 100A
8. **Technology**: Trench technology
Domain and module applications:
The low on-resistance and high current capability of D110NH02L-VB enable it to excel in multiple fields and modules. Here are some typical application scenarios:
1. **Power management module**: In power management modules, D110NH02L-VB can be used as an efficient switching element to provide stable current handling and efficient power conversion, suitable for computer power supplies, battery chargers and power distribution systems.
2. **Electric vehicles**: In electric vehicles, this MOSFET can be used in motor drives and battery management systems to provide efficient power switching control, helping to improve the overall performance and energy efficiency of electric vehicles.
3. **Power tools**: In power tools, D110NH02L-VB can be used for high-power switching and motor control to ensure efficient and reliable operation of the tools. Its high current handling capability makes it suitable for high-power power tools such as electric drills, saws, etc.
4. **Load Switch**: This MOSFET can be used in high-current load switching applications, such as power distribution and protection circuits, and can efficiently switch high-current loads and provide current protection.
5. **DC-DC Converter**: In DC-DC converters, D110NH02L-VB can be used as the main switching element to optimize power conversion efficiency and ensure high current handling, suitable for efficient power supply and conversion.
6. **High-frequency Switching Circuit**: Due to its low on-resistance and high switching speed, this MOSFET is suitable for high-frequency switching circuits such as switching power supplies, RF power supplies, and communication equipment, providing fast and reliable switching performance.
These characteristics of D110NH02L-VB enable it to perform well in applications with high current and high efficiency requirements, providing a high-performance and reliable power switching solution.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image