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D100N03ZA-VB Product details

Product introduction:

1. Product Introduction



**D100N03ZA-VB** is a high-performance N-channel MOSFET in TO252 package, manufactured based on Trench technology. The MOSFET can withstand a drain-source voltage (VDS) of up to 30V and supports a maximum drain current (ID) of 120A. Its design features include extremely low on-resistance, ensuring effective reduction of power consumption in high current applications. **D100N03ZA-VB** is suitable for circuits that require high current and low power consumption, such as efficient power management and switching circuits.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 120A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
II. Detailed parameter description



1. **Package type**: TO252

2. **Configuration**: Single N-channel

3. **Technology**: Trench

4. **Electrical parameters**:

- **Drain-source voltage (VDS)**: 30V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**: 1.7V

- **On-resistance (RDS(ON))**:

- 3mΩ @ VGS=4.5V

- 2mΩ @ VGS=10V

- **Drain current (ID)**: 120A



5. **Thermal parameters**:

- **Junction temperature range (Tj)**: -55°C to +150°C

- **Thermal resistance (junction to ambient) (RθJA)**: 50°C/W (typical)



6. **Dynamic parameters**:

- **Input capacitance (Ciss)**: 8500pF

- **Output capacitance (Coss)**: 1500pF

- **Reverse transfer capacitance (Crss)**: 500pF



Domain and module applications:

3. Application fields and module examples



**D100N03ZA-VB**'s high current carrying capacity and extremely low on-resistance make it very useful in multiple high-efficiency applications. Here are some specific application examples:



1. **Power management**

- In high-efficiency DC-DC converters, **D100N03ZA-VB** can be used as a switching element to provide efficient power conversion and reduce power consumption. Its low RDS(ON) characteristics help improve the overall efficiency of the system and reduce energy losses.



2. **Computer and server hardware**

- In computer motherboards and server power modules, this MOSFET is able to handle high current loads, support high-power applications and high-load environments, and ensure stable power supply and effective thermal management.



3. **Automotive electronics**

- In battery management systems (BMS) and motor control units for electric and hybrid vehicles, **D100N03ZA-VB** can efficiently manage the battery charge and discharge process, handle high current switching, and provide reliable current control.



4. **Industrial applications**

- In industrial power systems and power drive modules, this MOSFET is used to handle circuits with high current and high power requirements, such as motor control and power conversion applications, helping to improve system reliability and efficiency.



5. **Consumer electronics**

- For high-power portable devices such as power tools and high-power mobile devices, **D100N03ZA-VB** provides an efficient switching solution, optimizes power management, and extends device battery life.



Through applications in these fields, **D100N03ZA-VB** provides efficient current control and low power consumption solutions, adapting to the needs of a variety of high-current, high-power density circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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