CS2N60A3H-VB Product details
Product introduction:
CS2N60A3H-VB is a high voltage, high performance single N-channel MOSFET in TO251 package. This MOSFET is designed for high voltage applications with a maximum drain-source breakdown voltage of 650V and a continuous drain current of 2A. It uses Plannar technology to ensure good stability and reliability. The high on-resistance of CS2N60A3H-VB (RDS(ON) = 4300mΩ @ VGS=10V) makes it suitable for applications that require high voltage withstand capability but do not require high on-resistance.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| Parameter| Description|
|------|------|
| Package| TO251 |
| Configuration| Single N-channel|
| Drain-source breakdown voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 4300mΩ @ VGS=10V |
| Continuous drain current (ID) | 2A |
| Technology| Plannar |
Domain and module applications:
CS2N60A3H-VB MOSFET is suitable for the following main fields and modules due to its high voltage tolerance and reliability:
1. **High voltage power switch**: In power switch applications that need to handle high voltage, CS2N60A3H-VB can be used as a switching element. Its 650V drain-source breakdown voltage can meet the requirements of high voltage power supply design while providing stable switching function.
2. **Power converter**: In power converters, such as DC-DC converters or AC-DC adapters, CS2N60A3H-VB can be used as a switching element with high voltage levels. Although its on-resistance is relatively high, its high voltage capability makes it suitable for power conversion applications that require high voltage isolation.
3. **High voltage motor drive**: In motor drive applications, especially high voltage motor drive systems, CS2N60A3H-VB can provide reliable switching control. Its high voltage tolerance ensures stable operation during high-voltage motor driving.
4. **Power protection circuit**: In the power protection circuit, the CS2N60A3H-VB can be used as a protection switch. Its high voltage tolerance enables it to protect the power system from overvoltage or current surges.
5. **Industrial equipment**: In industrial equipment, especially equipment involving high voltage control, the CS2N60A3H-VB MOSFET can be used as a switching element to help achieve efficient power management and control.
Although the on-resistance of the CS2N60A3H-VB is relatively high, its high voltage capability and reliability make it excel in applications that require high voltage tolerance and stability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image