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CPH6621-VB Product details

Product introduction:

Product Introduction



CPH6621-VB is a high-efficiency dual P-channel MOSFET packaged in SOT23-6 and using advanced Trench technology. This MOSFET is designed to provide low on-resistance and excellent switching performance, suitable for a variety of small electronic devices. It can withstand a drain-source voltage (VDS) of up to -20V, and a gate-source voltage (VGS) range of ±12V. Its gate threshold voltage (Vth) is -0.6V, the on-resistance (RDS(ON)) is 100mΩ and 75mΩ at gate voltages of 2.5V and 4.5V respectively, and the maximum drain current (ID) is -4A. This makes CPH6621-VB particularly suitable for use in small circuits that require high switching efficiency and low power consumption.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Dual-P+P -20V -0.6V -4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Dual-P+P
Detailed parameter description



1. **Package type**: SOT23-6

2. **Configuration**: Dual P channel

3. **Drain-source voltage (VDS)**: -20V

4. **Gate-source voltage (VGS)**: ±12V

5. **Gate threshold voltage (Vth)**: -0.6V

6. **On-resistance (RDS(ON))**:

- 100mΩ @ VGS=2.5V

- 75mΩ @ VGS=4.5V

7. **Maximum drain current (ID)**: -4A

8. **Technology**: Trench



Domain and module applications:

Applications and Modules



The dual P-channel design and small package of the CPH6621-VB MOSFET enable it to excel in a variety of low-power and high-density applications. Here are some typical applications and modules for this product:



1. **Portable Electronic Devices**: In smartphones, tablets and other portable devices, the CPH6621-VB can be used as a power switch or load switch. Its low on-resistance and compact package make it ideal for space-constrained applications, while effectively managing power switches and providing efficient performance.



2. **DC-DC Converters**: In DC-DC converter designs, this MOSFET can be used as a switching element to optimize power conversion efficiency, making it particularly suitable for portable devices and other circuits that require high-efficiency power management.



3. **Battery Protection and Management**: In battery management systems, the CPH6621-VB can be used as a battery protection switch to prevent overcurrent or short-circuit conditions, ensuring safe use of the battery and extending its life.



4. **LED driver**: In LED drive circuits, CPH6621-VB can be used as a switch to control LEDs, ensuring stable light output and efficient power utilization, suitable for a variety of LED lighting applications.



5. **Small household appliances**: In small household appliances (such as small electric heaters, power tools, etc.), this MOSFET can be used as a power switch to help manage current and voltage to ensure safe and efficient operation of the equipment.



6. **Switching power supply**: In switching power supply design, CPH6621-VB can be used as a switching element, providing low on-resistance and high switching efficiency, suitable for a variety of power conversion and management applications.



Through these examples of application scenarios, CPH6621-VB shows its superior performance in high-efficiency, miniaturized and low-power designs, making it an ideal choice for a variety of small electronic devices and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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