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CPH6616-VB Product details
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1. Product Introduction
**CPH6616-VB** is a high-performance dual N-channel MOSFET using Trench technology, designed for applications requiring compact packaging and high switching efficiency. The device uses a SOT23-6 package and provides two sets of N-channel MOSFETs, which is suitable for realizing dual-channel switching functions in limited space. The main specifications include a maximum drain-source voltage of 20V, a gate drive voltage of ±12V, and a threshold voltage range of 0.5~1.5V. The on-resistance (RDS(ON)) is 28mΩ at VGS=2.5V and 22mΩ at VGS=4.5V, and the maximum continuous drain current is 6A. This makes the CPH6616-VB very suitable for use in compact circuit designs, providing efficient switching control.
**CPH6616-VB** is a high-performance dual N-channel MOSFET using Trench technology, designed for applications requiring compact packaging and high switching efficiency. The device uses a SOT23-6 package and provides two sets of N-channel MOSFETs, which is suitable for realizing dual-channel switching functions in limited space. The main specifications include a maximum drain-source voltage of 20V, a gate drive voltage of ±12V, and a threshold voltage range of 0.5~1.5V. The on-resistance (RDS(ON)) is 28mΩ at VGS=2.5V and 22mΩ at VGS=4.5V, and the maximum continuous drain current is 6A. This makes the CPH6616-VB very suitable for use in compact circuit designs, providing efficient switching control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
II. Detailed parameter description
| Parameter name| Parameter value|
|------------------|------------------------|
| Package type| SOT23-6 |
| Configuration| Dual N-channel|
| Drain-source voltage (VDS) | 20V |
| Gate drive voltage (VGS) | ±12V |
| Threshold voltage (Vth) | 0.5~1.5V |
| On-resistance (RDS(ON)) | 28mΩ @ VGS=2.5V |
| | 22mΩ @ VGS=4.5V |
| Continuous drain current (ID) | 6A |
| Technology| Trench |
| Parameter name| Parameter value|
|------------------|------------------------|
| Package type| SOT23-6 |
| Configuration| Dual N-channel|
| Drain-source voltage (VDS) | 20V |
| Gate drive voltage (VGS) | ±12V |
| Threshold voltage (Vth) | 0.5~1.5V |
| On-resistance (RDS(ON)) | 28mΩ @ VGS=2.5V |
| | 22mΩ @ VGS=4.5V |
| Continuous drain current (ID) | 6A |
| Technology| Trench |
Domain and module applications：
III. Application fields and module examples
**CPH6616-VB** MOSFET is suitable for the following fields and modules due to its compact dual N-channel design and low on-resistance:
1. **Portable devices**
- As a switch control element in portable devices (such as smartphones, tablets, etc.), it handles power management and signal switching, providing high-efficiency and energy-saving solutions.
2. **DC-DC converter**
- In the DC-DC converter module, the dual-channel MOSFET can be used for efficient voltage conversion and current switching, improving conversion efficiency and reducing energy loss.
3. **Power management**
- Used in power management systems to provide dual-channel switching functions, optimize power distribution and management, and improve system reliability and performance.
4. **LED drive circuit**
- In the LED drive circuit, it is used as a switch element to control the brightness and switch state of the LED, providing stable power control and high-efficiency switching performance.
5. **Small Motor Drive**
- In small motor drive circuits, dual N-channel MOSFETs can be used for bidirectional current control to provide reliable motor start and stop functions.
**CPH6616-VB** MOSFET is particularly suitable for space-limited and high-efficiency applications due to its dual-channel design and excellent switching performance, which can significantly improve the overall performance and reliability of the system.
**CPH6616-VB** MOSFET is suitable for the following fields and modules due to its compact dual N-channel design and low on-resistance:
1. **Portable devices**
- As a switch control element in portable devices (such as smartphones, tablets, etc.), it handles power management and signal switching, providing high-efficiency and energy-saving solutions.
2. **DC-DC converter**
- In the DC-DC converter module, the dual-channel MOSFET can be used for efficient voltage conversion and current switching, improving conversion efficiency and reducing energy loss.
3. **Power management**
- Used in power management systems to provide dual-channel switching functions, optimize power distribution and management, and improve system reliability and performance.
4. **LED drive circuit**
- In the LED drive circuit, it is used as a switch element to control the brightness and switch state of the LED, providing stable power control and high-efficiency switching performance.
5. **Small Motor Drive**
- In small motor drive circuits, dual N-channel MOSFETs can be used for bidirectional current control to provide reliable motor start and stop functions.
**CPH6616-VB** MOSFET is particularly suitable for space-limited and high-efficiency applications due to its dual-channel design and excellent switching performance, which can significantly improve the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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