CPH6613-VB Product details
Product introduction:
CPH6613-VB is a high-performance dual N-channel power MOSFET in SOT23-6 package, designed for compact circuits and efficient energy management applications. The MOSFET has a drain-source voltage of 20V and a maximum drain current of 6A. Its low on-resistance characteristics (22mΩ at VGS=4.5V and 28mΩ at VGS=2.5V) optimize current transfer efficiency and reduce power consumption. CPH6613-VB uses Trench technology to provide excellent switching performance and current management capabilities, making it ideal for use in application scenarios requiring high-density and efficient energy transfer.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
- **Model**: CPH6613-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
Domain and module applications:
The excellent performance and compact package of CPH6613-VB make it widely used in many fields and modules:
1. **Power management**:
- **Low voltage power switch**: The low on-resistance and high switching efficiency of this MOSFET make it suitable for low voltage power switch applications, which can efficiently manage power flow and reduce power consumption.
- **Dual switch configuration**: As a dual N-channel MOSFET, CPH6613-VB can realize multiple switch functions in the same package, which is suitable for use in power management modules that require multiple switches.
2. **Consumer electronics**:
- **Portable devices**: Due to its compact SOT23-6 package and efficient power management characteristics, CPH6613-VB is suitable for portable devices such as smartphones and tablets, helping to improve battery life and overall performance.
- **Battery protection circuit**: In the battery protection circuit, CPH6613-VB can effectively switch and manage current, provide multi-channel switching solutions, and protect the battery from overcurrent and overvoltage damage.
3. **Industrial applications**:
- **Small motor control**: CPH6613-VB is suitable for small motor control applications, providing efficient switching and control functions to support stable operation of the motor.
- **Power management module**: Due to its dual N-channel configuration and low on-resistance, this MOSFET is suitable for power management modules, providing reliable current switching functions and optimizing the efficiency and integration of the overall system.
These application examples demonstrate the importance and wide applicability of CPH6613-VB in low-voltage, efficient energy management systems and multi-channel switching applications.
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