CPH6602-VB Product details
Product introduction:
CPH6602-VB is a dual N-channel metal oxide semiconductor field effect transistor (MOSFET) in SOT23-6 package. This MOSFET is suitable for a variety of high-efficiency switching and power management applications with its low on-resistance and wide gate-source voltage range. The dual N-channel configuration of CPH6602-VB enables it to provide two independent switching channels in the same package, suitable for electronic devices that require compact layout and high-efficiency performance. Its trench technology provides superior switching speed and low on-resistance, ensuring efficient current control and switching operation.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
- **Package**: SOT23-6
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 28mΩ@VGS=2.5V
- 22mΩ@VGS=4.5V
- **Drain current (ID)**: 6A
- **Technology**: Trench
Domain and module applications:
CPH6602-VB MOSFET is widely used in the following fields and modules due to its dual N-channel configuration and low on-resistance:
1. **Portable electronic devices**:
- **Power management**: In portable electronic devices such as smartphones and tablets, CPH6602-VB can be used as the core component of power switches and power management modules, providing efficient current control and switching performance.
- **Charging circuit**: Used in battery charging circuits to control the switch of the charging process to ensure the efficiency and stability of charging.
2. **Computer and communication equipment**:
- **Power switch**: In computer motherboards and communication equipment, CPH6602-VB can be used as a power switch, providing efficient current management and low on-resistance to optimize power performance.
- **Power distribution**: Used in power distribution modules in communication equipment to provide efficient power switching functions and ensure the reliability and stability of the equipment.
3. **Automotive electronics**:
- **In-vehicle control circuits**: In automotive electronic systems, CPH6602-VB can be used for load switches and power management circuits, providing reliable switching performance and efficient current control.
- **Electric vehicle applications**: In the drive and control systems of electric vehicles, as an efficient switching element, improve the performance and energy efficiency of the system.
4. **Industrial automation**:
- **Motor drive**: In industrial automation systems, CPH6602-VB is used in motor drive circuits, providing efficient switching control and current management, supporting precise motor control.
- **Power management**: In industrial power management modules, this MOSFET is used for efficient current switching and regulation, ensuring stable operation and high efficiency of the system.
CPH6602-VB is an ideal choice for a variety of high-performance electronic applications due to its compact package and dual N-channel configuration, especially for application scenarios that require efficient switching and compact design.
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