CPH6442-VB Product details
Product introduction:
CPH6442-VB is a high-performance single N-channel MOSFET in SOT23-6 package. Designed for medium and high voltage applications, this MOSFET has a drain-source breakdown voltage of up to 60V and a continuous drain current of 7A. CPH6442-VB has low on-resistance (RDS(ON)) and threshold voltage (Vth = 1.7V), and adopts Trench technology to ensure excellent switching performance and low power consumption. Its compact package and excellent electrical characteristics make it an ideal switch and driver device in various electronic devices.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
| Parameter| Description|
|------|------|
| Package| SOT23-6 |
| Configuration| Single N-channel|
| Drain-source breakdown voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 35mΩ @ VGS=4.5V
30mΩ @ VGS=10V |
| Continuous drain current (ID) | 7A |
| Technology| Trench |
Domain and module applications:
Due to its excellent electrical characteristics and compact package, CPH6442-VB MOSFET is suitable for the following main fields and modules:
1. **Power management**: In power management systems, CPH6442-VB can be used as an efficient power switch and regulation device. Its low on-resistance and high drain-source breakdown voltage make it perform well in medium and high voltage applications, helping to improve power conversion efficiency and reduce power loss.
2. **Switching circuit**: In various switching circuits, CPH6442-VB can provide stable and reliable switching functions. Its low on-resistance and high current handling capability make it suitable for controlling loads, ensuring system stability and high efficiency.
3. **LED drive**: In LED drive circuits, CPH6442-VB can effectively control the switching and brightness adjustment of LEDs. Its high current capability and low on-resistance ensure the stability and high efficiency of LEDs, and are suitable for various LED lighting applications.
4. **Battery protection and management**: In battery protection and management systems, this MOSFET can be used for load switching and battery management functions. Its high drain-source breakdown voltage and low on-resistance help improve the efficiency and reliability of battery protection systems.
5. **Consumer electronics**: In consumer electronics such as laptops, wireless devices, etc., CPH6442-VB MOSFET can be used as an efficient switch and driver element to improve the power efficiency and stability of the product. Its compact package and excellent performance make it suitable for a variety of portable and small electronic products.
In summary, CPH6442-VB MOSFET has high efficiency and compact package, suitable for medium and high voltage switching and driving applications, meeting the performance and reliability requirements of modern electronic products.
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