CPH6352-VB Product details
Product introduction:
**CPH6352-VB** is a high-performance P-channel MOSFET in a SOT23-6 package and utilizing Trench technology. This MOSFET is designed for a drain-source voltage (VDS) of -30V and can carry a drain current (ID) of up to -4.8A. Its gate-source voltage (VGS) range is ±20V and its threshold voltage (Vth) is -1.7V. The on-resistance (RDS(ON)) is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, providing low power consumption and high-efficiency current control. This MOSFET is ideal for a variety of applications that require high switching frequencies and compact packaging.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
1. **Basic parameters**
- **Package type**: SOT23-6
- **Configuration**: Single P-channel
- **Technology**: Trench
2. **Electrical parameters**
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ@VGS=4.5V
- 49mΩ@VGS=10V
- **Drain current (ID)**: -4.8A
3. **Thermal parameters**
- **Junction temperature range (Tj)**: -55°C to +150°C
- **Thermal resistance (junction to ambient) (RθJA)**: typical 120°C/W
4. **Dynamic parameters**
- **Input capacitance (Ciss)**: 700pF
- **Output capacitance (Coss)**: 150pF
- **Reverse transfer capacitance (Crss)**: 60pF
Domain and module applications:
**CPH6352-VB**'s high switching frequency and compact package enable it to excel in multiple fields. Here are some specific application examples:
1. **Power management**
- In power management applications such as DC-DC converters and power distribution networks, **CPH6352-VB** can be used as an efficient switching element. Its low on-resistance and high switching frequency ensure high efficiency and low power consumption of the power module.
2. **Mobile devices**
- In mobile devices such as smartphones and tablets, **CPH6352-VB**'s SOT23-6 package is suitable for design requirements with limited space. It can be used in battery management and power control circuits, providing reliable switching functions to ensure long battery life and stable performance of the device.
3. **Communication equipment**
- In communication equipment such as base stations and routers, this MOSFET can be used for load switching and power amplifier regulation. Its high current capability and low power consumption ensure efficient operation and long-term stability of communication equipment.
4. **Automotive Electronics**
- In automotive electronic systems, such as on-board power management and switch control, **CPH6352-VB** is able to handle current switching and protection functions. Its high performance characteristics make it suitable for various electronic modules in automobiles, ensuring the reliability and safety of automotive electronic systems.
In summary, **CPH6352-VB** provides efficient switching performance and stability in power management, mobile devices, communication equipment, and automotive electronics. Its small package and high switching frequency make it suitable for a variety of application scenarios, meeting the needs of high performance and compact design.
Technical support:
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