CPH6351-VB Product details
Product introduction:
CPH6351-VB is a high-performance single P-channel MOSFET in SOT23-6 package, designed for low voltage applications. The MOSFET has a drain-source breakdown voltage of -30V and a continuous drain current of -4.8A. Its low on-resistance (RDS(ON)) and low threshold voltage (Vth = -1.7V) enable it to perform well in low voltage environments. CPH6351-VB uses Trench technology to ensure efficient switching performance and low power consumption, making it ideal for applications such as portable electronic devices, power management and LED driving.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
| Parameter| Description|
|------|------|
| Package| SOT23-6 |
| Configuration| Single P-channel|
| Drain-source breakdown voltage (VDS) | -30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 54mΩ @ VGS=4.5V
49mΩ @ VGS=10V |
| Continuous drain current (ID) | -4.8A |
| Technology| Trench |
Domain and module applications:
CPH6351-VB MOSFET is suitable for the following main fields and modules due to its excellent electrical characteristics and compact package:
1. **Portable electronic devices**: CPH6351-VB can be used as a high-efficiency switching element in smartphones, tablets and portable game consoles. Its low on-resistance and high switching efficiency ensure excellent performance under low-voltage operation, which helps to extend battery life and improve device performance.
2. **Low-power power management**: In low-power power management applications, CPH6351-VB can be used for power switching and current regulation. Its low threshold voltage and low on-resistance are suitable for various low-voltage power supply designs, optimizing power efficiency and reducing power loss.
3. **LED drive**: In LED drive circuits, CPH6351-VB can effectively control the switching operation of LEDs. Its high current capability and low on-resistance ensure LED stability and high efficiency, suitable for a variety of LED lighting applications.
4. **Battery protection and management**: In battery protection and management systems, this MOSFET can provide load switching and protection functions. Its high current handling capability and low on-resistance help improve the efficiency and reliability of battery management systems.
5. **Consumer electronics**: In consumer electronics such as remote controls and wireless headphones, the CPH6351-VB MOSFET can be used as a low-voltage switch control device to improve the power efficiency and stability of the product. Its small package and excellent performance make it suitable for a variety of portable and small electronic products.
In summary, the CPH6351-VB MOSFET is suitable for a variety of low-voltage, high-efficiency switch control applications with its high efficiency and compact package, meeting the performance and power efficiency requirements of modern electronic products.
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