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CPH6328-TL-E-VB Product details
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1. Product Introduction
**CPH6328-TL-E-VB** is a high-performance single P-channel MOSFET using Trench technology, designed for low-voltage and high-withstand voltage applications. The device is packaged in a SOT23-6 package with compact size and excellent electrical performance. The main specifications include a maximum drain-source voltage of -100V, a gate drive voltage of ±20V, and a threshold voltage of -2V. The on-resistance (RDS(ON)) is 252mΩ at VGS=4.5V and 200mΩ at VGS=10V, and the maximum continuous drain current is -4.1A. These characteristics make the CPH6328-TL-E-VB suitable for a variety of application scenarios that require high voltage tolerance and high switching efficiency.
**CPH6328-TL-E-VB** is a high-performance single P-channel MOSFET using Trench technology, designed for low-voltage and high-withstand voltage applications. The device is packaged in a SOT23-6 package with compact size and excellent electrical performance. The main specifications include a maximum drain-source voltage of -100V, a gate drive voltage of ±20V, and a threshold voltage of -2V. The on-resistance (RDS(ON)) is 252mΩ at VGS=4.5V and 200mΩ at VGS=10V, and the maximum continuous drain current is -4.1A. These characteristics make the CPH6328-TL-E-VB suitable for a variety of application scenarios that require high voltage tolerance and high switching efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -100V | -2V | -4.1A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -100V | -2V | -4.1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -100V | -2V | -4.1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
II. Detailed parameter description
| Parameter name| Parameter value|
|------------------|------------------------|
| Package type| SOT23-6 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -100V |
| Gate drive voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -2V |
| On-resistance (RDS(ON)) | 252mΩ @ VGS=4.5V |
| | 200mΩ @ VGS=10V |
| Continuous drain current (ID) | -4.1A |
| Technology| Trench |
| Parameter name| Parameter value|
|------------------|------------------------|
| Package type| SOT23-6 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -100V |
| Gate drive voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -2V |
| On-resistance (RDS(ON)) | 252mΩ @ VGS=4.5V |
| | 200mΩ @ VGS=10V |
| Continuous drain current (ID) | -4.1A |
| Technology| Trench |
Domain and module applications：
3. Application fields and module examples
**CPH6328-TL-E-VB** MOSFET is suitable for the following fields and modules due to its high withstand voltage and high on-resistance:
1. **Power management**
- As a switching element in the power management circuit, it controls the switching of current and the stability of power supply, and is suitable for high voltage and high power application environments.
2. **High voltage switch**
- Used in switch applications that need to withstand high voltage, such as high-voltage battery management systems, to ensure stable current control and switch reliability.
3. **Power amplifier**
- Used for switch control in power amplifier circuits, providing stable current and voltage management to ensure the normal operation and high efficiency of the circuit.
4. **Battery protection circuit**
- Used in battery protection circuits to prevent overvoltage or overcurrent, and effectively protect the safety and performance of battery packs through high withstand voltage capability.
5. **DC-DC Converter**
- As the main switch in the DC-DC converter, it controls the voltage conversion process in high voltage applications to improve conversion efficiency and system stability.
**CPH6328-TL-E-VB** MOSFET, with its high withstand voltage and stable performance, is suitable for various power management and power control applications that require high voltage withstand and high switching efficiency, ensuring system reliability and efficient operation.
**CPH6328-TL-E-VB** MOSFET is suitable for the following fields and modules due to its high withstand voltage and high on-resistance:
1. **Power management**
- As a switching element in the power management circuit, it controls the switching of current and the stability of power supply, and is suitable for high voltage and high power application environments.
2. **High voltage switch**
- Used in switch applications that need to withstand high voltage, such as high-voltage battery management systems, to ensure stable current control and switch reliability.
3. **Power amplifier**
- Used for switch control in power amplifier circuits, providing stable current and voltage management to ensure the normal operation and high efficiency of the circuit.
4. **Battery protection circuit**
- Used in battery protection circuits to prevent overvoltage or overcurrent, and effectively protect the safety and performance of battery packs through high withstand voltage capability.
5. **DC-DC Converter**
- As the main switch in the DC-DC converter, it controls the voltage conversion process in high voltage applications to improve conversion efficiency and system stability.
**CPH6328-TL-E-VB** MOSFET, with its high withstand voltage and stable performance, is suitable for various power management and power control applications that require high voltage withstand and high switching efficiency, ensuring system reliability and efficient operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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