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CPH6315-TL-E-VB Product details

Product introduction:

1. Product Introduction



**CPH6315-TL-E-VB** is a high-performance P-channel MOSFET packaged in SOT23-6 and using Trench technology. This MOSFET is capable of operating at a drain-source voltage (VDS) of -30V and carrying a drain current (ID) of up to -4.8A. Its gate-source voltage (VGS) range is ±20V and its threshold voltage (Vth) is -1.7V. Its on-resistance is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, ensuring low power consumption and high efficiency in medium current applications. **CPH6315-TL-E-VB** is particularly suitable for applications that require high switching frequencies and compact packaging.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-P -30V -1.7V -4.8A 49mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-P
II. Detailed parameter description



1. **Basic parameters**

- **Package type**: SOT23-6

- **Configuration**: Single P-channel

- **Technology**: Trench



2. **Electrical parameters**

- **Drain-source voltage (VDS)**: -30V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**: -1.7V

- **On-resistance (RDS(ON))**:

- 54mΩ@VGS=4.5V

- 49mΩ@VGS=10V

- **Drain current (ID)**: -4.8A



3. **Thermal parameters**

- **Junction temperature range (Tj)**: -55°C to +150°C

- **Thermal resistance (junction to case) (RθJC)**: typical value 50°C/W



4. **Dynamic parameters**

- **Input capacitance (Ciss)**: 700pF

- **Output capacitance (Coss)**: 150pF

- **Reverse transfer capacitance (Crss)**: 60pF



Domain and module applications:

3. Application fields and module examples



**CPH6315-TL-E-VB**'s high switching frequency and compact package enable it to excel in multiple fields. Here are some specific application examples:



1. **Power management**

- In power management applications such as DC-DC converters and power distribution networks, **CPH6315-TL-E-VB** can be used as a switching element to provide efficient current control. Its low on-resistance and high switching frequency are suitable for switching and regulation in power modules.



2. **Mobile devices**

- In mobile devices such as smartphones and tablets, **CPH6315-TL-E-VB**'s SOT23-6 package is ideal for space-limited applications. It can be used in battery management and power control circuits to provide reliable switching functions.



3. **Communication equipment**

- In communication equipment such as base stations and routers, this MOSFET can be used for load switching and power amplifier regulation. Its high current capability and low power consumption ensure efficient operation and long-term stability of communication equipment.



4. **Automotive Electronics**

- In automotive electronic systems, such as on-board power management and switch control, **CPH6315-TL-E-VB** is able to handle current switching and protection functions. Its high performance characteristics make it suitable for various electronic modules in automobiles.



In summary, **CPH6315-TL-E-VB** provides efficient switching performance and stability in power management, mobile devices, communication equipment, and automotive electronics. Its small package and high switching frequency make it suitable for a variety of application scenarios, meeting the needs of high performance and compact design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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