CPH6314-VB Product details
Product introduction:
CPH6314-VB is a high-performance single P-channel MOSFET packaged in SOT23-6. Designed for low-voltage applications, this MOSFET has a drain-source breakdown voltage of up to -30V and a continuous drain current of -4.8A. It uses Trench technology to ensure low on-resistance (RDS(ON)) and excellent switching performance. The low threshold voltage (Vth = -1.7V) of CPH6314-VB enables it to operate reliably at lower gate-source voltages, making it ideal for applications requiring high efficiency and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
| Parameter| Description|
|------|------|
| Package| SOT23-6 |
| Configuration| Single P-channel|
| Drain-source breakdown voltage (VDS) | -30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 54mΩ @ VGS=4.5V
49mΩ @ VGS=10V |
| Continuous drain current (ID) | -4.8A |
| Technology| Trench |
Domain and module applications:
Due to its excellent electrical characteristics and compact package, CPH6314-VB MOSFET is suitable for the following main fields and modules:
1. **Portable electronic devices**: In portable devices such as smartphones, tablets and portable game consoles, CPH6314-VB can be used as an efficient switching element. Its low on-resistance and high switching efficiency enable it to perform well in low-voltage operation, helping to extend battery life and improve device performance.
2. **Low-power power management**: In low-power power management applications, this MOSFET can be used for power switching and current regulation. Its low threshold voltage and low on-resistance are suitable for various low-voltage power supply designs, optimizing power efficiency and reducing power loss.
3. **LED drive**: In LED drive circuits, CPH6314-VB can effectively control the switching of LEDs. Its high current capability and low on-resistance ensure the stability and high efficiency of LEDs, making it suitable for various LED lighting applications.
4. **Battery protection and management**: In battery protection and management systems, this MOSFET can provide load switching and protection functions. Its high current handling capability and low on-resistance help improve the efficiency and reliability of battery management systems.
5. **Consumer electronics**: In consumer electronics such as remote controls and wireless headphones, the CPH6314-VB MOSFET can be used as a low-voltage switch control device to improve the product's power efficiency and stability. Its small package and excellent performance make it suitable for a variety of portable and small electronic products.
In summary, with its high efficiency and compact package, the CPH6314-VB MOSFET is suitable for a variety of low-voltage, high-efficiency switch control applications, meeting the performance and power efficiency requirements of modern electronic products.
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