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CPH6312-TL-E-VB Product details
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Product Introduction
CPH6312-TL-E-VB is a high-performance single P-channel MOSFET packaged in SOT23-6 and using advanced Trench technology. This MOSFET can withstand drain-source voltage (VDS) up to -30V, and gate-source voltage (VGS) range is ±20V. Its gate threshold voltage (Vth) is -1.7V, and the on-resistance (RDS(ON)) is 54mΩ@VGS=4.5V and 49mΩ@VGS=10V at different gate voltages, and the maximum drain current (ID) is -4.8A. This device is designed for high-performance small electronic devices and is suitable for a variety of low-power applications.
CPH6312-TL-E-VB is a high-performance single P-channel MOSFET packaged in SOT23-6 and using advanced Trench technology. This MOSFET can withstand drain-source voltage (VDS) up to -30V, and gate-source voltage (VGS) range is ±20V. Its gate threshold voltage (Vth) is -1.7V, and the on-resistance (RDS(ON)) is 54mΩ@VGS=4.5V and 49mΩ@VGS=10V at different gate voltages, and the maximum drain current (ID) is -4.8A. This device is designed for high-performance small electronic devices and is suitable for a variety of low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
1. **Package type**: SOT23-6
2. **Configuration**: Single P channel
3. **Drain-source voltage (VDS)**: -30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: -1.7V
6. **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
7. **Maximum drain current (ID)**: -4.8A
8. **Technology**: Trench
1. **Package type**: SOT23-6
2. **Configuration**: Single P channel
3. **Drain-source voltage (VDS)**: -30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: -1.7V
6. **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
7. **Maximum drain current (ID)**: -4.8A
8. **Technology**: Trench
Domain and module applications：
Applications and modules
The small package and high efficiency of CPH6312-TL-E-VB MOSFET make it an important application in a variety of fields and modules. Here are some specific application scenarios of this product:
1. **Portable electronic devices**: In smartphones, tablets and other portable devices, CPH6312-TL-E-VB is used as a power switch. Its small package and low on-resistance are very suitable for space-constrained applications while ensuring low power consumption and high efficiency.
2. **Low-power switch**: Suitable for low-power switching applications, such as controlling small loads in consumer electronics or switching functions in battery management systems, helping to reduce power consumption and improve system reliability.
3. **Battery protection circuit**: In battery protection circuits, CPH6312-TL-E-VB can be used as an overcurrent protection switch to prevent overcharging or over-discharging of batteries. Its high current handling capability and low on-resistance can effectively protect batteries and extend their service life.
4. **LED Driver**: In LED driver design, this MOSFET can be used as a switching element to control the on/off operation of the LED, ensuring stable light output and optimizing power usage.
5. **Household Appliances**: In household appliances (such as small appliances, toys, etc.), CPH6312-TL-E-VB can be used as a power switch to help manage current and voltage to ensure safe and efficient operation of the equipment.
Through these application scenario examples, CPH6312-TL-E-VB shows its superior performance in high-efficiency, miniaturized and low-power designs, making it an ideal choice for a variety of small electronic products and switching applications.
The small package and high efficiency of CPH6312-TL-E-VB MOSFET make it an important application in a variety of fields and modules. Here are some specific application scenarios of this product:
1. **Portable electronic devices**: In smartphones, tablets and other portable devices, CPH6312-TL-E-VB is used as a power switch. Its small package and low on-resistance are very suitable for space-constrained applications while ensuring low power consumption and high efficiency.
2. **Low-power switch**: Suitable for low-power switching applications, such as controlling small loads in consumer electronics or switching functions in battery management systems, helping to reduce power consumption and improve system reliability.
3. **Battery protection circuit**: In battery protection circuits, CPH6312-TL-E-VB can be used as an overcurrent protection switch to prevent overcharging or over-discharging of batteries. Its high current handling capability and low on-resistance can effectively protect batteries and extend their service life.
4. **LED Driver**: In LED driver design, this MOSFET can be used as a switching element to control the on/off operation of the LED, ensuring stable light output and optimizing power usage.
5. **Household Appliances**: In household appliances (such as small appliances, toys, etc.), CPH6312-TL-E-VB can be used as a power switch to help manage current and voltage to ensure safe and efficient operation of the equipment.
Through these application scenario examples, CPH6312-TL-E-VB shows its superior performance in high-efficiency, miniaturized and low-power designs, making it an ideal choice for a variety of small electronic products and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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