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CPH6311-VB Product details
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1. Product Introduction
**CPH6311-VB** is a high-performance single P-channel MOSFET using Trench technology, designed for low voltage and high switching efficiency applications. The device is packaged in SOT23-6 and is compact, making it suitable for space-constrained applications. Key specifications include a maximum drain-source voltage of -30V, a gate drive voltage of ±20V, and a threshold voltage of -1.7V. The on-resistance (RDS(ON)) is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, with a maximum continuous drain current of -4.8A. This MOSFET is suitable for a variety of applications requiring low on-resistance and efficient switching.
**CPH6311-VB** is a high-performance single P-channel MOSFET using Trench technology, designed for low voltage and high switching efficiency applications. The device is packaged in SOT23-6 and is compact, making it suitable for space-constrained applications. Key specifications include a maximum drain-source voltage of -30V, a gate drive voltage of ±20V, and a threshold voltage of -1.7V. The on-resistance (RDS(ON)) is 54mΩ at VGS=4.5V and 49mΩ at VGS=10V, with a maximum continuous drain current of -4.8A. This MOSFET is suitable for a variety of applications requiring low on-resistance and efficient switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
II. Detailed parameter description
| Parameter name| Parameter value|
|------------------|------------------------|
| Package type| SOT23-6 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -30V |
| Gate drive voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 54mΩ @ VGS=4.5V |
| | 49mΩ @ VGS=10V |
| Continuous drain current (ID) | -4.8A |
| Technology| Trench |
| Parameter name| Parameter value|
|------------------|------------------------|
| Package type| SOT23-6 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -30V |
| Gate drive voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 54mΩ @ VGS=4.5V |
| | 49mΩ @ VGS=10V |
| Continuous drain current (ID) | -4.8A |
| Technology| Trench |
Domain and module applications：
III. Application fields and module examples
**CPH6311-VB** MOSFET is suitable for the following fields and modules due to its low on-resistance and compact package:
1. **Portable electronic devices**
- As an efficient switching element in portable electronic devices, it handles low voltage and low current applications, improves battery efficiency, and extends device usage time.
2. **Battery management system**
- Used in battery management systems to control the charging and discharging process, optimize battery performance, and provide over-current and over-temperature protection.
3. **DC-DC converter**
- As a switching device in a DC-DC converter, it regulates the voltage conversion process and improves conversion efficiency, which is suitable for low-power and high-density applications.
4. **Low voltage switch**
- As a low voltage switch, it is used in various power management circuits to control the switching state of the power supply and ensure the stable and reliable operation of the circuit.
5. **Consumer Electronics**
- In consumer electronics (such as smartphones, tablets, etc.), it is used for power management and signal switching to provide efficient and reliable power control.
**CPH6311-VB** MOSFET, with its small SOT23-6 package and low on-resistance characteristics, performs well in applications that require high performance and compact design, and can effectively improve the overall performance and efficiency of the device.
**CPH6311-VB** MOSFET is suitable for the following fields and modules due to its low on-resistance and compact package:
1. **Portable electronic devices**
- As an efficient switching element in portable electronic devices, it handles low voltage and low current applications, improves battery efficiency, and extends device usage time.
2. **Battery management system**
- Used in battery management systems to control the charging and discharging process, optimize battery performance, and provide over-current and over-temperature protection.
3. **DC-DC converter**
- As a switching device in a DC-DC converter, it regulates the voltage conversion process and improves conversion efficiency, which is suitable for low-power and high-density applications.
4. **Low voltage switch**
- As a low voltage switch, it is used in various power management circuits to control the switching state of the power supply and ensure the stable and reliable operation of the circuit.
5. **Consumer Electronics**
- In consumer electronics (such as smartphones, tablets, etc.), it is used for power management and signal switching to provide efficient and reliable power control.
**CPH6311-VB** MOSFET, with its small SOT23-6 package and low on-resistance characteristics, performs well in applications that require high performance and compact design, and can effectively improve the overall performance and efficiency of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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