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CMU70NO3-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**CMU70NO3-VB** is a high-performance single N-channel MOSFET that uses Trench technology to provide excellent current handling capability and extremely low on-resistance. The device is packaged in TO251 and has excellent thermal management and electrical performance. Key specifications include a maximum drain-source voltage of 30V, a gate drive voltage of ±20V, and a threshold voltage of 1.7V. The on-resistance (RDS(ON)) is 4.5mΩ at VGS=4.5V and 3.5mΩ at VGS=10V, and the maximum continuous drain current is 100A. These features make the CMU70NO3-VB particularly suitable for high current density and high efficiency switching applications.
**CMU70NO3-VB** is a high-performance single N-channel MOSFET that uses Trench technology to provide excellent current handling capability and extremely low on-resistance. The device is packaged in TO251 and has excellent thermal management and electrical performance. Key specifications include a maximum drain-source voltage of 30V, a gate drive voltage of ±20V, and a threshold voltage of 1.7V. The on-resistance (RDS(ON)) is 4.5mΩ at VGS=4.5V and 3.5mΩ at VGS=10V, and the maximum continuous drain current is 100A. These features make the CMU70NO3-VB particularly suitable for high current density and high efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. Detailed parameter description
| Parameter name| Parameter value|
|------------------|------------------------|
| Package type| TO251 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 30V |
| Gate drive voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 4.5mΩ @ VGS=4.5V |
| | 3.5mΩ @ VGS=10V |
| Continuous drain current (ID) | 100A |
| Technology| Trench |
| Parameter name| Parameter value|
|------------------|------------------------|
| Package type| TO251 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 30V |
| Gate drive voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 4.5mΩ @ VGS=4.5V |
| | 3.5mΩ @ VGS=10V |
| Continuous drain current (ID) | 100A |
| Technology| Trench |
Domain and module applications：
III. Application fields and module examples
**CMU70NO3-VB** MOSFET's ultra-low on-resistance and high current handling capability make it outstanding in the following fields and modules:
1. **High-efficiency switching power supply**
- Switching element used in high-efficiency switching power supply design, capable of handling high current loads, improving power conversion efficiency, and reducing energy loss and heat generation.
2. **Electric vehicle drive system**
- As the main switch in the motor drive system of electric vehicles and hybrid vehicles, it controls the current flow of the motor and improves the efficiency and performance of the system.
3. **High-power DC-DC converter**
- Applied in high-power DC-DC converters to handle high current loads, optimize the voltage conversion process, and ensure stable and efficient operation of the system.
4. **Battery management system**
- Used in battery management systems to control the charging and discharging process, ensure efficient operation and long life of the battery pack, and support high current operation.
5. **High-frequency switching circuit**
- As the main switching device in the high-frequency switching circuit, it provides low on-resistance and high current capability to ensure the stability and high efficiency of the circuit under high-frequency conditions.
**CMU70NO3-VB** MOSFET is suitable for various switching applications with high current density and high efficiency requirements due to its extremely low on-resistance and high current capability, which can effectively improve the overall performance and reliability of the system.
**CMU70NO3-VB** MOSFET's ultra-low on-resistance and high current handling capability make it outstanding in the following fields and modules:
1. **High-efficiency switching power supply**
- Switching element used in high-efficiency switching power supply design, capable of handling high current loads, improving power conversion efficiency, and reducing energy loss and heat generation.
2. **Electric vehicle drive system**
- As the main switch in the motor drive system of electric vehicles and hybrid vehicles, it controls the current flow of the motor and improves the efficiency and performance of the system.
3. **High-power DC-DC converter**
- Applied in high-power DC-DC converters to handle high current loads, optimize the voltage conversion process, and ensure stable and efficient operation of the system.
4. **Battery management system**
- Used in battery management systems to control the charging and discharging process, ensure efficient operation and long life of the battery pack, and support high current operation.
5. **High-frequency switching circuit**
- As the main switching device in the high-frequency switching circuit, it provides low on-resistance and high current capability to ensure the stability and high efficiency of the circuit under high-frequency conditions.
**CMU70NO3-VB** MOSFET is suitable for various switching applications with high current density and high efficiency requirements due to its extremely low on-resistance and high current capability, which can effectively improve the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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