CMU50P06-VB Product details
Product introduction:
CMU50P06-VB is a high-performance single P-channel MOSFET in TO251 package, designed for negative voltage applications. Its main features include a drain-source breakdown voltage of up to -60V and a continuous drain current of -50A, suitable for handling larger current loads. This MOSFET uses Trench technology to provide low on-resistance (RDS(ON)), which helps improve switching efficiency and reduce power losses. Its low threshold voltage and wide gate-source voltage range enable it to excel in a variety of negative voltage switch control applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
| Parameter| Description|
|------|------|
| Package| TO251 |
| Configuration| Single P-channel|
| Drain-source breakdown voltage (VDS) | -60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -2.5V |
| On-resistance (RDS(ON)) | 17mΩ @ VGS=4.5V
13mΩ @ VGS=10V |
| Continuous drain current (ID) | -50A |
| Technology| Trench |
Domain and module applications:
Due to its excellent performance and wide application range, CMU50P06-VB MOSFET is suitable for the following main fields and modules:
1. **Negative voltage switching power supply**: In negative voltage switching power supply applications, CMU50P06-VB MOSFET can be used as an efficient switching element to achieve stable conversion of negative voltage power supply. Its low on-resistance can reduce power loss and improve the overall efficiency of the power supply system.
2. **Reverse current protection**: In the current protection circuit, this MOSFET can prevent the current from flowing in the reverse direction and protect the circuit from damage caused by reverse current. Its low on-resistance helps to reduce power loss in the protection circuit.
3. **Load switch**: In various load switch applications, CMU50P06-VB can efficiently control the load switch operation and is suitable for scenarios requiring negative voltage control. Its high current capability and low on-resistance make it excellent in high load switch applications.
4. **Battery Management System**: In a battery management system, this MOSFET can be used for load switching and protection functions to help manage the battery's charge and discharge process. Its high current handling capability and low on-resistance help improve system efficiency and stability.
5. **Motor Control**: In motor control applications, the CMU50P06-VB MOSFET can be used for load switching to control the motor, especially in scenarios where negative voltage switching is required. Its high current capability and low on-resistance make it suitable for a variety of motor drive modules.
In summary, the CMU50P06-VB MOSFET is an ideal choice for negative voltage switch control, high current loads, and battery management systems due to its excellent performance and wide range of applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image